Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes

Abstract

We demonstrated the effects of growth conditions such as growth pressure and growth temperature during the selective growth of InGaN/GaN multiple quantum wells (MQWs) on semipolar GaN microstripes on Si substrates. Grown layers exhibited the ridge growth, which indicates the thickness fluctuation, owing to the source supply from the apexes of the GaN microstructure. Ridge growth was suppressed by increasing growth pressure and decreasing growth temperature. Cathode luminescence (CL) analysis showed uniform luminescence. As a result, high pressure and low temperature are suitable for obtaining uniform heterostructures in the selective growth of InGaN/GaN MQWs on GaN microstripes. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Enhancement of performance of GaN-based light-emitting diodes by insertion and optimization of n-InGaN/GaN composite current-spreading layers

“…The layer structure of the conventional GaN-based LED without CSL (labeled sample A) consists of a 25-nm-thick GaN nucleation-layer grown at 530 °C, a 3.0-µm-thick undoped GaN layer grown at 1050 °C, and a 2.0-µm-thick Si-doped n-GaN layer (concentration of donor atoms N d = 1 © 10 19 cm ¹3 ) grown at 1050 °C. 23,24) These layers are followed by 6 pairs of In 0.15 Ga 0.85 N/GaN (3 nm/12 nm) MQWs grown at 750 °C for the In 0.15 Ga 0.85 N QW and at 900 °C for the GaN barrier, respectively. A 20-nm-thick p-AlGaN electron blocking layer was then grown over the In 0.15 Ga 0.85 N/GaN MQWs at 900 °C, and finally a 0.25-µm-thick p-GaN contact layer was grown at 1000 °C to complete the MOCVD growth of conventional GaN-based LEDs without CSL.…”