Abstract:A study of the technology of selective oxidation of the buried AlGaAs layer used as an aperture layer in the structure of a Vertical-cavity surface-emitting laser has been carried out. Oxidation process was made as thermal oxidating in a humidified nitrogen atmosphere. The conditions of the oxidation process are described, images of the oxidation results and the dependence of the growth rate of the oxidized layer on the process temperature are presented. A technology for the formation of an oxide current apert… Show more
“…Additionally, the oxide aperture of the thin-film VCSEL is defined by lateral wet oxidation of AlGaAs using an electrical tube furnace. The 10-μm oxide-confined aperture can provide several merits such as the low resistance of upper DBR, the reduced recombination rate of the sidewalls near the cavity, and the less lateral current crowding outside the optical cavity 24 . Figure 2 p-on-n structure of the thin-film VCSEL by MOCVD.…”
Recently, biocompatible optical sources have been surfacing for new-rising biomedical applications, allowing them to be used for multi-purpose technologies such as biological sensing, optogenetic modulation, and phototherapy. Especially, vertical-cavity surface-emitting laser (VCSEL) is in the spotlight as a prospective candidate for optical sources owing to its low-driving current performance, low-cost, and package easiness in accordance with two-dimensional (2D) arrays structure. In this study, we successfully demonstrated the actualization of biocompatible thin-film 930 nm VCSELs transferred onto a Polydimethylsiloxane (PDMS) carrier. The PDMS feature with biocompatibility as well as biostability makes the thin-film VCSELs well-suited for biomedical applications. In order to integrate the conventional VCSEL onto the PDMS carrier, we utilized a double-transfer technique that transferred the thin-film VCSELs onto foreign substrates twice, enabling it to maintain the p-on-n polarity of the conventional VCSEL. Additionally, we employed a surface modification-assisted bonding (SMB) using an oxygen plasma in conjunction with silane treatment when bonding the PDMS carrier with the substrate-removed conventional VCSELs. The threshold current and maximum output power of the fabricated 930 nm thin-film VCSELs are 1.08 mA and 7.52 mW at an injection current of 13.9 mA, respectively.
“…Additionally, the oxide aperture of the thin-film VCSEL is defined by lateral wet oxidation of AlGaAs using an electrical tube furnace. The 10-μm oxide-confined aperture can provide several merits such as the low resistance of upper DBR, the reduced recombination rate of the sidewalls near the cavity, and the less lateral current crowding outside the optical cavity 24 . Figure 2 p-on-n structure of the thin-film VCSEL by MOCVD.…”
Recently, biocompatible optical sources have been surfacing for new-rising biomedical applications, allowing them to be used for multi-purpose technologies such as biological sensing, optogenetic modulation, and phototherapy. Especially, vertical-cavity surface-emitting laser (VCSEL) is in the spotlight as a prospective candidate for optical sources owing to its low-driving current performance, low-cost, and package easiness in accordance with two-dimensional (2D) arrays structure. In this study, we successfully demonstrated the actualization of biocompatible thin-film 930 nm VCSELs transferred onto a Polydimethylsiloxane (PDMS) carrier. The PDMS feature with biocompatibility as well as biostability makes the thin-film VCSELs well-suited for biomedical applications. In order to integrate the conventional VCSEL onto the PDMS carrier, we utilized a double-transfer technique that transferred the thin-film VCSELs onto foreign substrates twice, enabling it to maintain the p-on-n polarity of the conventional VCSEL. Additionally, we employed a surface modification-assisted bonding (SMB) using an oxygen plasma in conjunction with silane treatment when bonding the PDMS carrier with the substrate-removed conventional VCSELs. The threshold current and maximum output power of the fabricated 930 nm thin-film VCSELs are 1.08 mA and 7.52 mW at an injection current of 13.9 mA, respectively.
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