Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

Watanabe, Takayuki; Funakubo, Hiroshi

doi:10.1016/j.jssc.2004.10.019

Cited by 7 publications

(7 citation statements)

References 17 publications

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“…10. 25) This means the generation of a proton conduction path separated by an (SrTa2O7) 2-layer. The above results clearly demonstrate that a-/b-axisoriented BLSDs can be used as a mold for making novel materials with a periodic nano-structure in conjunction with the intercalation technique.…”

Section: Application Of Anisotropy Of Blsd Natural Superlattice With mentioning

confidence: 99%

Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure

Funakubo

2008

J. Ceram. Soc. Japan

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Degradation -free dielectric property was obtained by using films of bismuth layer-structured dielectrics (BLSDs) having a natural superlattice structure. Investigation of the effects of the stack direction of the bismuth oxide and pseudoperovskite layers on the dielectric properties of c-axis-oriented epitaxial BLSD films revealed that those with an even number of octahedra in the pseudoperovskite layer did not show significant degradation in the dielectric constant and retained good insulating characteristics when the film thickness was decreased despite the increased strain applied to the film. This was found not only in epitaxially grown films but also in one-axis-oriented ones with in-plane random orientation. In addition, films with a-/b-axisoriented epitaxial BLSDs can be used a mold with a periodic nano-structure.

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Section: Application Of Anisotropy Of Blsd Natural Superlattice With mentioning

confidence: 99%

Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure

Funakubo

2008

J. Ceram. Soc. Japan

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“…Furthermore, the sandwich structure consisting of two ͑Bi 2 O 2 ͒ 2+ layer parts and a pseudoperovskite layer shows great promise for future applications, such as nanodot memories combined using a scanning probe technique. 79,80 So far, two kinds of bottom electrodes are suitable for growing a-͑/b-͒axis-oriented films. One is ͑101͒-oriented rutile-structured oxide, such as RuO 2 and IrO 2 , 68,69 and the other is strained ͑110͒SrRuO 3 .…”

Section: Challenges For A-axis-oriented Filmsmentioning

confidence: 99%

“…81 The a-/b-axis-oriented SBT ͑m =2͒, BIT, and their modified derivatives ͑m =3͒ and SrBi 4 Ti 4 O 15 ͑m =4͒ were epitaxially grown on the rutile-structured layer using MOCVD. 68,69,79 Matsuda et al reported that BPT films prepared by chemical solution decomposition on the fibertextured ͑111͒Ir layer showed a preferred a-axis orientation. They suggest that the preferred a-axis orientation of the BPT films arises from the surface ͑101͒IrO 2 layer, which is attributed to the surface oxidation of the ͑111͒Ir layer during the process.…”

Section: Challenges For A-axis-oriented Filmsmentioning

confidence: 99%

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

Watanabe

Funakubo

2006

Journal of Applied Physics

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This article describes the current progress in thin bismuth layer-structured ferroelectric films ͑BLSFs͒ including SrBi 2 Ta 2 O 9 and ͑Bi, La͒ 4 Ti 3 O 12 , particularly those developed in the last ten years. BLSF thin films can be applied to ferroelectric random access memories because of their durable fatigue-free properties and lead-free composition. We will briefly introduce epitaxial thin films grown on a variety of substrates. Because of the difficulty in growing single crystals of sufficient size to characterize the ferroelectric behavior in specific crystal growth directions, we will characterize epitaxially grown thin films to obtain basic information about the anisotropic switching behavior, which is important for evaluating the performance of emerging materials. We will then discuss the fiber-textured growth on the ͑111͒Pt-covered Si substrates of SrBi 2 Ta 2 O 9 and Bi 4 Ti 3 O 12 thin films. Because we expect that the spread crystal orientation will affect the bit-to-bit errors, we believe that the fiber-textured growth and the characterization technique for the deposited film orientation are interesting from a practical standpoint. Another specific challenge of thin film growth is the growth of a-axis-͑polar axis͒-oriented films. a-/b-axis-oriented films are characterized both crystallographically and by electric hysteresis loop. The hysteresis performance was in accordance with the volume fraction of the a / b domains; however, no evidence for 90°switching of the b domain by an external electric field was obtained. The control of film orientation also allows systematic studies on the effects of a structural modification and relation between spontaneous polarization and Curie temperature, examples of which are given in this paper. After a short description of the piezoelectric properties, we will conclude with a summary and the future prospects of BLSF thin films for research and applications.

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“…This compound possesses a typical bismuth layer perovskite structure, in which perovskite blocks (SrNb 2 O 7 ) 2-, composed of double NbO 6 octahedra are interleaved with (Bi 2 O 2 ) layers. However, BLSFs have fatal weaknesses that a high coercive field (E c ) and a very low piezoelectric constant (d 33 ), making it difficult for BLSFs to reveal their piezoelectric properties [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Dielectric, ferroelectric and piezoelectric properties of Ca0.1Sr0.9Bi2Nb2O9 ceramic

Yao

Chu

et al. 2015

J Mater Sci: Mater Electron

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Ca x Sr 1-x Bi 2 Nb 2 O 9 , as one of Aurivillius ceramics, was prepared by a conventional solid-state reaction method. The X-ray diffraction study showed that the ceramic possess a pure structure and no secondary phase can be detected. The scanning electron microscopy indicates that the grains of all the samples are all welldefined, but no obvious impact on the size of the ceramics. The dielectric, ferroelectric and piezoelectric properties of the Ca 0.1 Sr 0.9 Bi 2 Nb 2 O 9 were investigated and found that the Curie temperature (T c ), piezoelectric constant (d 33 ), remnant polarization (2P r ) and coercive field (E c ) were about 552°C, 18 pC/N, 15.34 lC/cm 2 and 47.75 kV/cm, respectively. Meanwhile, the impedance and dielectric properties of this piezoceramic for practical applications have also been discussed.

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Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

Cited by 7 publications

References 17 publications

Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure

Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

Dielectric, ferroelectric and piezoelectric properties of Ca0.1Sr0.9Bi2Nb2O9 ceramic

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