2015
DOI: 10.1016/j.jnoncrysol.2015.09.021
|View full text |Cite
|
Sign up to set email alerts
|

Selective wet etching of amorphous As2Se3 thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
11
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 23 publications
(11 citation statements)
references
References 22 publications
0
11
0
Order By: Relevance
“…Thus, the formation of similar alkyl ammonium germanium sulfide (AAGS) salts can be expected during dissolving of germanium-sulfide ChG in BA, but the AAGS salts probably start to decompose at higher temperatures in comparison with AAAS salts. Release of organic molecules during the thermal treatment of spin-coated Ge25S75 thin films affects also the chemical stability of thin films [20,21]. In order to investigate the changes in chemical resistance of deposited thin films the samples annealed at various temperatures were etched in 0.1% vol.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, the formation of similar alkyl ammonium germanium sulfide (AAGS) salts can be expected during dissolving of germanium-sulfide ChG in BA, but the AAGS salts probably start to decompose at higher temperatures in comparison with AAAS salts. Release of organic molecules during the thermal treatment of spin-coated Ge25S75 thin films affects also the chemical stability of thin films [20,21]. In order to investigate the changes in chemical resistance of deposited thin films the samples annealed at various temperatures were etched in 0.1% vol.…”
Section: Resultsmentioning
confidence: 99%
“…The etching kinetics of as-prepared and annealed thin film samples were studied by procedure presented in [21] in 0.1% vol. BA solution in aprotic solvent.…”
Section: Methodsmentioning
confidence: 99%
“…% ethylenediamine solution in dimethyl sulfoxide at 25°C. Data were evaluated by procedure presented in [26]. The etching curves were analyzed at two wavelengths corresponding to the first interference maximum and the first interference minimum of measured transmission spectra.…”
Section: Methodsmentioning
confidence: 99%
“…The etching kinetics of as-prepared, annealed and exposed thin films were studied by procedure presented in [14,18], thin film samples were etched in 50 vol. % BA solution in aprotic solvent at 25 °C.…”
Section: Experiments Detailsmentioning
confidence: 99%
“…In order to study the effect of annealing and exposure on chemical resistance of TE and SC thin films, the Ge20Sb5S75 samples were etched in BA based solution using the experimental setup described in [14,18]. Based on the obtained data of films thicknesses and etching times, the etching rates vetch and etching selectivity (ratio between the etching rate of exposed and unexposed thin film) were calculated (Figure 7).…”
Section: Fig 5 the Raman Spectra Of Te Thin Films And Source Bulk Gmentioning
confidence: 99%