Selectively grown GaN nanowalls and nanogrids for photocatalysis: growth and optical properties

Abstract

Position-controlled growth of GaN nanowalls and nanogrids with predefined planes as sidewalls with high crystal quality for photocatalytic applications.

Nonthermal Plasma Synthesis of Gallium Nitride Nanoparticles: Implications for Optical and Electronic Applications

“…GaN nanocrystals offer an opportunity to sidestep these issues by restricting crystal growth to very small domains, over which defects can be limited/passivated and substrate issues are eliminated. Further, using group III–V nanocrystals opens up avenues to novel device manifestations, such as stretchable and flexible architectures and others. − Additionally, the high surface-to-volume ratio of GaN nanocrystalline materials opens up avenues to photocatalysis and lithium-ion storage for batteries. − To fully exploit these attributes, it is necessary to grow the nanocrystals as single particles. Nonthermal plasma synthesis is one method that has excellent potential for GaN nanoparticles (GaN NPs).…”

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

“…A detailed description of the NS fabrication process can be found in previous publications. 31,32,34 The background pressure of the MBE system was in the 10 À10 mbar range.…”

“…The viewpoint of the NWs is chosen to highlight the tilt of the NWs while the NFs are imaged from a different direction to show their m-plane facets. Similarly to NFs on sapphire, 34 the in-plane crystal orientation of the NFs relative to SCD (111) is xed due to the strong epitaxial relationship of [10 10]GaNk[011]diamond. 35 GaN NWs on HD (001) (Fig.…”

Hydrothermal Synthesis of CaMn2O4·xH2O Nanorods as Co‐Catalysts on GaN Nanowire Photoanode

“…Furthermore, the PEC technique does not require post processing for gas separation as each gas is generated by separate electrodes. Commonly used semiconductor‐based photoanodes, such as Fe 2 O 3 , WO 3 , ZnO, TiO 2 , BiVO 4 , InP, GaAs, and GaN have been extensively investigated due to their extraordinary potential for converting solar energy into hydrogen energy 11–21 . Among the above‐listed photoanodes, GaN is particularly attractive due to several advantages, including relative chemical robustness and applicability in diverse processes, including p/n junctions and tandem junctions 22 .…”