Selector-less crossbar array resistive RAM based on TiO2 fabricated by photochemical metal-organic deposition

A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO2 single layer

“…As shown in Table S1 (ESI†), the a-TiO 2 based memristor exhibits remarkable rectification characteristics and low voltage operation. 57–66…”

Interface-Type Ionic Memristor for Energy-Efficient Neuromorphic Hardware

“…Among the strong candidates for NVM, ionic memristors are particularly advantageous for multibit implementation due to their relatively large on/off ratio and fast writing speed. However, their low reliability, such as cycle-to-cycle (C2C), and device-to-device (D2D) variations due to the resistive switching (RS) mechanism “defect control”, is identified as the major weakness of ionic memristors. − Typically, ionic memristors can be classified into interface-type and filament-type, each based on different mechanisms and showing significant differences in RS characteristics. − While filament-type has been mainstream in NVM research fields requiring only 1-bit, − interface-type has recently attracted attention for neuromorphic hardware applications demanding extensive multibit implementation. − Here, we compare the RS characteristics of these two memristors and introduce alkali ion-based memristor devices to overcome the technical challenges that ionic memristor devices face in neuromorphic hardware implementation.…”