Selenisation of sequentially electrodeposited Cu–Zn and Sn precursor layers

Iljina, J.; Volobujeva, Olga; Raadik, T.; Naidu, Revathi; Raudoja, J.; Loorits, Mihkel; Traksmaa, Rainer; Mellikov, E.

doi:10.1016/j.tsf.2012.12.085

Cited by 15 publications

(4 citation statements)

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“…The classical 2‐stage approach employed for the synthesis of CZTS(Se) films consists of the formation of a metal precursor film followed by chalcogenization . The precursor film may be either in the form of stack metals and/or metal alloy layers , but a number of works have also been published on the co‐electrodeposition of CZTS , as well as CZTSe layers from aqueous and non‐aqueous solvents .…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

Colombara

Crossay

Vauche

et al. 2014

Phys. Status Solidi A

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This paper aims at providing an updated overview of the main achievements in the development of solar cells based on Cu 2 ZnSn(S,Se) 4 (CZTS(Se)) Kesterite absorbers obtained by electrodeposition. Although undoubtedly challenging, the ultimate goal is to learn from the past works and build a solid framework for future advances in this field. What is the reason for the lower efficiency of electrodeposited CZTS(Se)-based devices (8%) compared to the world record efficiency achieved with a hydrazine-based solution approach (12.6%)? Can this gap be filled, or there are intrinsic limitations for this achievement? The review is divided into the three main electrodeposition approaches: sequential elemental layer, alloy co-deposition, and chalcogenide co-deposition. It is argued that considerable technical challenges must be overcome for the latter approach to be successfully applied.Plot of the record power conversion efficiencies of Kesterite sulfide-based solar cells obtained by electrodeposition (hollow dots), and world record efficiency of CZTS(Se)-based devices (full dots). The dashed line shows the 15% minimum efficiency threshold considered relevant for potential industrial application.

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Section: Introductionmentioning

confidence: 99%

Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

Colombara

Crossay

Vauche

et al. 2014

Phys. Status Solidi A

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“…During Raman measurement, 514.5 nm excitation wavelength of laser source was used, so penetration depth of laser source could be in the range of 150 nm according to the studies of Fernandes et al 24 Raman spectra reveal three Raman peaks corresponding to CZTSe at 172 cm −1 , 195 cm −1 and 234 cm −1 Raman shift along with most intense peak at 195 cm −1 which are in agreement with the previous studies. [18][19][20][21] No peak corresponding to any secondary phases of Cu 2 Se, Cu 2 SnSe 3 or SnSe was observed, suggesting the formation of pure crystalline CZTSe phase. The atomic chemical composition of selenized film by scanning electron microscope equipped with EDS is also in agreement with the pure crystalline CZTSe phase.…”

Section: Resultsmentioning

confidence: 99%

“…[18][19][20][21] MoSe 2 (JCPDS 29-0914) which usually forms at the interface between CZTSe and bottom Mo layer was observed at diffraction angles 31.2…”

Section: Resultsmentioning

confidence: 99%

“…18,19 Here, dominant peak of polycrystalline CTZSe (112) lies at diffraction angle (2θ) 28.53 • , which is in agreement with literature. [18][19][20][21] MoSe 2 (JCPDS 29-0914) which usually forms at the interface between CZTSe and bottom Mo layer was observed at diffraction angles 31.2 • and 55.9 • . The broadening of MoSe 2 peaks indicate its poor crystallinity.…”

Section: Resultsmentioning

confidence: 99%

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Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Khalil

Bernasconi

Pedrazzetti

et al. 2017

J. Electrochem. Soc.

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Earth abundant Cu 2 ZnSnSe 4 (CZTSe) thin films solar cells were fabricated on flexible molybdenum (Mo) foil substrate through an electrochemical approach. After co-electroplating from single electrolyte, Cu-Zn-Sn (CZT) precursor was selenized in quartz tube furnace at 550 • C for 15 minutes in Ar atmosphere with the presence of elemental selenium in order to form CZTSe compound. Before selenization, CZT precursor was soft-annealed at 310 • C for 150 minutes in Ar atmosphere in order to improve intermixing of the elements and to reduce roughness. The formation of Kesterite CZTSe on selenized film was confirmed by X-ray diffraction (XRD) and Raman spectroscopy. SEM imaging and EDS line profile on the cross-section of CZTSe layer showed the well-formed CZTSe along depth of the film also. Opto-electrical characteristics of the film by photoluminescence spectroscopy confirmed the suitability of the absorber layer to make solar cell. A flexible solar cell with Al/Al-ZnO/i-ZnO/CdS/CZTSe/Mo-foil configuration, which showed 0.1% power conversion efficiency at first attempt, has been fabricated, in which buffer layer CdS has been deposited through chemical bath deposition and transparent conducting oxides (i-ZnO, Al-ZnO) have been deposited by DC pulsed sputtering. Thin films solar cells based on earth abundant Kesterite Cu 2 ZnSn(S,Se) 4 absorber layers have drawn significant attention within the research community over the last few years as future low cost photovoltaic devices in order to meet global energy demand in tera-watt scale. These materials are direct bandgap p-type semiconductors for which the bandgap ranges from 1.0 eV for Cu 2 ZnSnSe 4 (CZTSe) to 1.5 eV for Cu 2 ZnSnS 4 (CZTS) and at the same time they have very high optical absorption coefficients of over 10 4 cm −1 which make them potential alternative as absorber layer for existing commercialized thin films solar cells Cu 2 InGaSe 4 (CIGS) and CdTe.1 As CIGS and CdTe contain earth scarce, costly and toxic materials, so they need to be replaced. Different vacuum and non-vacuum techniques have already been employed to fabricate high quality crystalline Kesterite compounds. Up to now, highest 12.6% power conversion efficiency of sulfo-selenide Cu 2 ZnSn(S,Se) 4 thin film solar cell was achieved using hydrazine based solution process. 2 Whereas highest power conversion efficiencies of pure sulfide CZTS (obtained from evaporation) and pure selenide CZTSe (obtained from sputtering) thin film solar cells are 9.2% and 11.6% respectively reported.3,4 Those highest power conversion efficiencies were achieved when conventional molybdenum (Mo) coated soda lime glass was used as a back contact substrate. On the other hand, till now highest power conversion efficiencies of CZTS and CZTSe thin film solar cells on flexible substrate were reported 4.2% and 6.1%. 5,6 In order to reduce production costs and deployment of thin film PV-based technologies in mass scale, Kesterite-based thin film solar cells technologies should be manufacturable at high throughput with low cos...

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Solution‐Processed Kesterite Solar Cells

Liu

2017

Printable Solar Cells

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Selenisation of sequentially electrodeposited Cu–Zn and Sn precursor layers

Cited by 15 publications

References 15 publications

Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

Electrodeposition of kesterite thin films for photovoltaic applications: Quo vadis?

Co-Electrodeposition of Metallic Precursors for the Fabrication of CZTSe Thin Films Solar Cells on Flexible Mo Foil

Solution‐Processed Kesterite Solar Cells

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