Selenium adsorbed single wall carbon nanotubes as a potential candidate for nanoscale interconnects

Abstract

Using ab initio calculations, we show that atomic selenium (Se) strongly adsorbs to the outer surface of single wall carbon nanotubes (SWCNTs), converting the semiconductor nanotubes to metallic and enhancing the conductance of the metallic and semimetallic ones. Considering the ease of vaporizing and depositing selenium, due to its volatile nature and low melting point, this system could be potentially viable. Thus, selenium adsorption offers a single process for enhancing the conductance of SWCNTs regardless of their chirality making them a promising candidate for nanoscale interconnects applications.

Tuning the electrical transport properties of double-walled carbon nanotubes by semiconductor and semi-metal filling

“…6 Since the present samples investigated have a wide diameter distribution, the metallic behavior observed in the Se@DWNT's samples is justified on the basis that new states from Se are introduced into the pseudo bandgap regions of DWNT's (see Fig. 1(c)).…”

“…This is because of the concentric cylindrical graphene sheets and relatively wider diameter of DWNT's compared to SWNT's that implies more capacity of filling. While there has been significant theoretical work in interpreting the transport of semiconductor filled DWNT's, 6,7,12 direct experimental proof of superior electrical transport has not been firmly established. One of the challenges has been the difficulty in synthesizing high quality DWNT's.…”

“…14 Incorporation of HgTe in SWNT's was reported to transform it from the semi-metallic to semiconducting phase depending on the tube diameter. 7 Furthermore, ab initio calculations have predicted an increase in conductivity of SWNT's by Se filling, 6 which motivated us to extend the work to filled DWNT's through detailed transport measurements at low temperatures and high fields. In this study, we intend to determine the effect of semi-metal/semiconductor nanomaterials within the core of DWNT's on the transport of the composite materials.…”

“…Se or HgTe, has been shown to modify the electrical properties of the host or foreign material, respectively. 6,7 Theoretical calculations have suggested that the conversion of semiconducting CNT's to metallic ones due to the introduction of 'p' states from the filler element into CNT's bandgap. 6 Other studies have also suggested hybridization of the CNT's p states and filler element resulting in a slight change of the diameter.…”

“…6,7 Theoretical calculations have suggested that the conversion of semiconducting CNT's to metallic ones due to the introduction of 'p' states from the filler element into CNT's bandgap. 6 Other studies have also suggested hybridization of the CNT's p states and filler element resulting in a slight change of the diameter. 8 It is important to understand the coupling between CNT's and the fillers to establish the specific change in the transport of this composite material.…”