Selenization of Cu and In thin films for the preparation of selenide photo-absorber layers in solar cells using Se vapour source

Lakshmikumar, S.T.; Rastogi, A. C.

doi:10.1016/0927-0248(94)90251-8

Cited by 225 publications

(46 citation statements)

References 4 publications

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“…Due to its polymorphism and the related metal-ion defect structure, In 2 Se 3 has attracted substantial attention as a promising semiconductor material for several different applications such as photovoltaic solar cell [7,8], optoelectronics [9], and ionic battery [10].…”

Section: Introductionmentioning

confidence: 99%

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

2017

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High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100°C/s. Comparing with the slower heating rate, 0.1°C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials.

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Section: Introductionmentioning

confidence: 99%

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

2017

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“…A range of chalcogenides have been deposited from M[ESi(SiMe) 3 ] 2 (M = Zn, Cd, Hg; E = S, Se or Te) complexes as single source precursors [23] [24]. Metal complexes with the general formula [M(R 2 PSe 2 ) n ] (M = Zn, Cd, Pb, In, Ga, Cu, Bi, Ni; R = i Pr, Ph)…”

Section: Introductionmentioning

confidence: 99%

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Alghamdi¹

2017

MSA

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Polycrystalline thin films of ZnSe and ZnS x Se 1−x have been deposited on glass substrates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from bis(diethyldiselenocarbamato)zinc(II) and a 1:1 and 1:0.75 mixtures of bis(diethyldiselenocarbamato)zinc(II) and bis(diethyldithiocarbamato)zinc (II) as precursors. All films were characterized by p-XRD, SEM, EDX, Raman spectroscopy, photoluminescence (PL and UV/Vis spectroscopy. The band gap of pure ZnSe thin films was found to be 2.25 whereas the band gap of ZnS x Se 1−x films varied from 2.55 to 2.66 eV depending on the sulfur content in the films. PL emission spectra showed a clear blue shift for ZnS x Se 1−x films compared to ZnSe due to the sulphur content in the films which increase the band gap. The band gap of ZnSSe can be controlled by sulfur to selenium ratio in the alloy. The morphology of the ZnSe thin films changed from small randomly shaped crystallites to triangles whereas the morphology of ZnS x Se 1−x was mainly based on cuboids.

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“…[1][2][3][4][5][6][7] To transfer the science and technology to practical production, the development of simple synthesis methods to reduce the number of reaction steps and the reliance on chemical additives is required for yield and cost control. In this context, a variety of synthesis methods have been developed to prepare nanocrystalline silver selenide (Ag 2 Se) because this promising A I 2 B VI semiconductor can be used to make solar cells, 8 magnetic field sensors, 9 solidstate electrochemical sensors, 10 and optical filters. 11 Prevalent synthesis methods include the use of microwave radiation, 12 sonochemical force, 13 microemulsion mixing, 14 and electrochemical potential 15 to drive the decomposition of selenium and/ or silver compounds to form Ag 2 Se.…”

Section: Introductionmentioning

confidence: 99%

Using Elemental Se and Ag to Grow Pure Ag₂Se Dendrites/Dendritic-Films of Highly Oriented (001) Nanocrystals

Zheng

Shui

et al. 2008

J. Phys. Chem. C

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A clean, facile route of using only common bulk selenium (Se) powder and silver (Ag) foil in a simple solvothermal process is developed to synthesize a film of silver selenide (Ag 2 Se) dendrites of highly oriented (001) nanocrystals. The simple process takes ∼10 h at 160°C in a common alcohol such as methanol or ethanol in an autoclave, and the reaction time is shorter than in many prevalent methods. The adoption of elemental Se and Ag (foil) in the synthesis eases the control of the purity of the product, simplifies the reaction steps, and reduces the costs, as the synthesis does not require Se and Ag compounds, and also requires no chemical additives other than an alcohol as solvent. The results support a mechanism of dissolution of the bulk-like Se powder in the solvothermal process, transport of solvated Se to react with Ag, nucleation of Ag 2 Se nanocrystals, surface-mediated, solvation-assisted surface diffusion of Ag 2 Se nanocrystals, and diffusionlimited aggregation of the Ag 2 Se nanocrystals through oriented attachment for the growth of dendrites having highly oriented (001) nanocrystals. The clean, relative facile route is practical for the fabrication of Ag 2 Se crystals/films with hierarchically ordered nanostructures for future applications in solar cell devices. More importantly, the same concept can be adopted for the synthesis of other nanomaterials with bulk elemental reactants with no reliance on chemical compounds or additives.

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Selenization of Cu and In thin films for the preparation of selenide photo-absorber layers in solar cells using Se vapour source

Cited by 225 publications

References 4 publications

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Using Elemental Se and Ag to Grow Pure Ag₂Se Dendrites/Dendritic-Films of Highly Oriented (001) Nanocrystals

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Selenization of Cu and In thin films for the preparation of selenide photo-absorber layers in solar cells using Se vapour source

Cited by 225 publications

References 4 publications

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Composition and Band Gap Controlled AACVD of ZnSe and ZnS&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;1-x&lt;/sub&gt; Thin Films Using Novel Single Source Precursors

Using Elemental Se and Ag to Grow Pure Ag2Se Dendrites/Dendritic-Films of Highly Oriented (001) Nanocrystals

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Composition and Band Gap Controlled AACVD of ZnSe and ZnS<sub>x</sub>Se<sub>1-x</sub> Thin Films Using Novel Single Source Precursors

Using Elemental Se and Ag to Grow Pure Ag₂Se Dendrites/Dendritic-Films of Highly Oriented (001) Nanocrystals