Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Russo, U.; Ielmini, Daniele; Cagli, C.; Lacaita, A.L.

doi:10.1109/ted.2008.2010584

Cited by 366 publications

(241 citation statements)

References 24 publications

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“…28 In this process, all filaments may not dissolve completely, resulting in the existence of residual small filaments during the HRS state ( Fig. 5(a)).…”

mentioning

confidence: 99%

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Hota

Caraveo-Frescas

McLachlan

et al. 2014

Applied Physics Letters

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“…28 In this process, all filaments may not dissolve completely, resulting in the existence of residual small filaments during the HRS state ( Fig. 5(a)).…”

mentioning

confidence: 99%

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Hota

Caraveo-Frescas

McLachlan

et al. 2014

Applied Physics Letters

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“…From a microscopic point of view, 3 the resistive switching mechanisms are usually classified into electrochemical metallization mechanism, 7,8 valence change mechanism, 9-14 and the fuse-antifuse mechanism. [15][16][17] Both bipolar and unipolar switching behaviors have been reported in HfO 2 based dielectric stacks. 18 Several other dielectric films also show similar non-polar switching behaviours.…”

mentioning

confidence: 99%

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

Raghavan

et al. 2011

Applied Physics Letters

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Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectric resistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

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“…Depending on the material group [3], device structure [4,5], and defect status [6,7], various switching behaviors can be observed. The switching mechanisms are typically classified as either a valence change effect [8], a thermochemical effect [2,9], or an electrochemical effect [10,11], whereby distinct surface effects can be attributed to various mechanisms [12,13]. Ke et al proposed that the oxygen concentration influences the redox reaction in ZnO resistive switching [12], and Tsuruoka et al suggested that H 2 O vapor plays as an essential role in the redox reaction of an electrochemical Cu/SiO 2 /Pt device [13,14].…”

Section: Introductionmentioning

confidence: 99%

Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

Liu¹,

Huang²

2016

Nano Online

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The resistive switching characteristics of the Cu/SiO x /Pt structure (control sample) exhibited a direct correlation to humidity. The H 2 O vapor formed the Cu oxide at the Cu/SiO x interface, and Cu ions were injected from the Cu oxide into the SiO x layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The Cu x O layer in the Cu/Cu x O/SiO x /Pt structure (Cu x O sample) helped the dissolution of Cu ions from the Cu electrode into the SiO x layer, enabling effective electrochemical resistive switching in a vaporless environment. The Cu x O sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.

show abstract

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

Cited by 366 publications

References 24 publications

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

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