Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits

Malmqvist, R.; Jönsson, Robert; Samuelsson, C.; Reyaz, Shakila Bint; Rantakari, Pekka; Ouacha, A.; Vähä-Heikkilä, T.; Varis, J.; Rydberg, Anders

doi:10.1109/smicnd.2012.6400650

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…The proposed design has a low actuation voltage of 1.7 V which leads to self-actuation of the bridge as explained in [18,19]. Self-actuation by RF power and actuation voltage are closely correlated to each other.…”

Section: Power Handlingmentioning

confidence: 99%

“…In the ON state, overlap capacitance is 2.01 pF and parasitics have a negligible effect on it. Insertion loss lies in the range of −0.3 dB to −0.6 dB for a wide bandwidth of 19 (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GHz. Isolation varies from −28.1 dB (@1 GHz) to −20 dB (@20 GHz) as shown in Figure 7.…”

Section: Electromagnetic Analysismentioning

confidence: 99%

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Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Bansal

Bajpai

Kumar

et al. 2016

Journal of Electrical and Computer Engineering

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RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

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Section: Power Handlingmentioning

confidence: 99%

Section: Electromagnetic Analysismentioning

confidence: 99%

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Bansal

Bajpai

Kumar

et al. 2016

Journal of Electrical and Computer Engineering

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“…On the other hand, the capacitive RF MEMS switch has a frequency range over a few GHz, because the switch is operated by capacitance variation. Generally, in terms of structure simplicity, charging problem, compatibility with a microstrip line, robustness, and reliability, the ohmic contact RF MEMS switch performs better than the capacitive RF MEMS switch for frequencies less than 50 GHz [4][5][6]. In this paper, by using dual axis movement the SPDT ohmic contact switch is used up to 100 GHz.…”

Section: Introductionmentioning

confidence: 99%

A 50–100 GHz ohmic contact SPDT RF MEMS silicon switch with dual axis movement

Sim

Lee

Jang

et al. 2016

Microelectronic Engineering

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We firstly show the prototype of an ohmic contact Single-Pole Double-Throw Radio Frequency Micro-Electro-Mechanical Systems (SPDT RF MEMS) switch operating at 50-100 GHz. The fabricated ohmic contact SPDT RF MEMS silicon switch moves both laterally and vertically, to improve the isolation at high frequencies by initially misaligning the contact part of the switch over a Coplanar Waveguide (CPW) transmission line. The lateral and vertical movement of the switch is operated by using comb and parallel plate actuators, respectively. The proposed switch was fabricated using Silicon-On-Glass (SiOG) bonding process. The insertion loss of the fabricated switch is measured according to the different operation states of the switch, in the range from 50 to 100 GHz. The fabricated length of the transmission line is 4.6 mm and the measured insertion loss and isolation are 9.13 dB and 24.37 dB at 70 GHz, respectively. Keyword 2 RF MEMS switch; high isolation; dual axis movement; silicon switch

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“…For RF/microwave switch design, PIN diode , microelectromechanical system , low temperature co‐fire ceramic , and field effect transistor (FET) (in both GaAs and CMOS processes) are four commonly used technologies. However, considering cost, integration, switching speed, power consumption, and linearity, FET switches based on III–V compounds (e.g., GaAs), especially pseudomorphic high electron mobility transistors (pHEMTs), are the most attractive choice on the wireless communication market.…”

Section: Introductionmentioning

confidence: 99%

A wide range monolithic pHEMT SPDT switch

Menbari

Dousti

Hajghassem

2014

Micro & Optical Tech Letters

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In this study, we propose the design, fabrication, and measurement results of a −6 V single pole double throw (SPDT) switch in the frequency band of DC‐20 GHz. We use a pseudomorphic high electron mobility transistor (pHEMT) GaAs technology. This technology has a gate width of 0.15 μm and a cutoff frequency of 85 GHz. A high yield and good performance switch based on pHEMT transistor is presented for using in SPDT circuit. In this method, we can reduce the off mode capacitor of transistor (Coff) and optimize the transistor in switch mode. Therefore, this method increases the transistor isolation in “off” mode with no change in the resistance of transistor in “on” mode (Ron). Measurement results show that the insertion loss is 1 dB with variation of ±0.1 dB in the frequency bandwidth and its isolation is better than 35 dB. The linear power range of the circuit is 28 dBm. The chip size is 0.2 mm2 and very low power consumption of 25 μ w is achieved. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1454–1458, 2014

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Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits

Cited by 7 publications

References 5 publications

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

A 50–100 GHz ohmic contact SPDT RF MEMS silicon switch with dual axis movement

A wide range monolithic pHEMT SPDT switch

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