Self-Adjusting Electrochemical Etching Technique for Producing Nanoporous Silicon Membrane

Abstract

This chapter presents the technique in producing the nanoporous silicon membrane using electrochemical etching technique. Electrochemical etching technique is a self-adjusting technique due to its ability to control transfer of ion to form pore by manipulating certain parameters. There are several parameters that have been manipulated to study the effect of each parameter to the pore formation by characterizing each component. The project starts with fabrication of silicon membrane and then continues with characterization of HF concentration, current density, doping and also alcohol diluents using field emission scanning electron microscopy (FESEM). The effect of each parameter is discussed in terms of pore size, pore formation and pore structure. Finally, the pore with size less than 100 nm and columnar structure has formed using this technique. The star-shaped structure is also formed through this experimental setup. Improved nanoporous silicon membrane can be applied for filtration and separating particles, especially in an artificial kidney.

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

“…The electric field will create oxides on the surface of the pores. Then, pores formed exactly where the holes are when the oxide layer is dissolve by the electrolyte solution [8]. Therefore, there is a possibility of applying high-efficiency etching, which is changing high current density for smaller electrode distances in the making of porous silicon.…”

“…In this research, we have been used the electrochemical anodization method. The parameters including current density, etching/anodization time, type of etching solution, and electrode distance are the determinants of the pore results in the electrochemical anodization method so that further research is needed [8]. Therefore, in this research, we focused on the variation of current density and electrode distance in the formation of PSi on n-type Si(111).…”

Xác Định Diện Tích Bề Mặt Tương Tác Điện Hóa Của Điện Cực Nano Xốp Silic Bằng Quét Thế Tuần Hoàn

“…Cấu trúc này cho thấy đế Si sau ăn mòn có dạng hình thái cấu trúc nano rỗng xốp kiểu tổ ong và thể hiện tính đồng đều cao. Đây là cấu trúc hình thái khá tương đồng khi so sánh với các kết quả nghiên cứu trước đã công bố về nano Si bằng ăn mòn điện hóa, ví dụ điển hình như trong công trình của Norhafizah và đồng nghiệp [22]. Diện tích tương tác điện hóa (ESA) của mẫu nano xốp Si được xác định khi sử dụng quét thế điện hóa tuần hoàn CV trong dung dịch H 2 SO 4 (nồng độ 0,1 M).…”

Reflection Coefficient Calculation of a Structure Including a Porous Silicon Layer with Transfer Matrix Method and FDTD

“…This method is performed in hydrofluoric (HF) solution but just dipping the silicon in HF is not formed PSi. A current flow between two electrodes, which is the silicon at the anode and platinum at the cathode is needed [3,15]. In electrochemical etching, current density, HF concentration, temperature, etching time, type of silicon and dopant concentration are the parameters effecting formation of the pores [16].…”