Through silicon via (TSV) technology has been widely applied in CMOS image sensors (CIS). This paper reports the wetting behavior of polymer liquid in the TSV insulation process by spin coating. The O 2 plasma treatment was used to increase the hydrophilicity of the substrate surface in order to reduce the adhesion between the polymer liquid and the via sidewall. This surface treatment was to ensure that the polymer liquid can enter the vias smoothly. Besides, the O 2 plasma treatment to the wafer could also improve the wetting rate and decrease the balanced contact angle. During the course of the present study, different parameters of power and time of O 2 plasma treatment were used to modify the wafer surface and the sidewall of vias. The optimal O 2 plasma treatment condition was determined with the power of 160 W and the processing time of 25 s. It was confirmed that the method of O 2 plasma treatment is beneficial to the wetting in the deposition process of the polymer insulation layer for TSVs.
Keywords-through silicon via; O 2 plasma treatment; polymer liquid; insulation; adhesion 2014 15th International Conference on Electronic Packaging Technology 978-1-4799-4707-2/14/$31.00 ©2014 IEEE