Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning

Raley, Angélique; Mohanty, Nihar; Sun, Xingsheng; Farrell, Richard A.; Smith, Jeffrey; Ko, Akiteru; Metz, Andrew; Biolsi, Peter; Devilliers, Anton

doi:10.1117/12.2257769

Cited by 7 publications

(5 citation statements)

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“…According to the material options of the finally formed array, the SAMP processes can also be categorized into two types: single-material scheme shown in Fig. 4, or the multiple-material scheme [20][21][22][23][24][25][26][27] shown in Fig. 5 wherein two or three types of lines made of different materials are arranged in an alternating order.…”

Section: Characteristics Of Various Self-aligned Patterning Schemesmentioning

confidence: 99%

“…By designing various mandrel/spacer patterns and accommodating multi-material arrangement, SAMP techniques can be extended from front-end fin/gate patterning (e.g., self-aligned cut or SAC [20][21][22][23][24]) to back-end metallization (e.g., self-aligned block or SAB [25][26][27]) using the etching selectivity to solve the edge-placement-error (EPE) issue. In Fig.…”

Section: Challenges Of Via and Cut Epe Issues And Existing Approachesmentioning

confidence: 99%

“…The top views of SAB steps are not shown in the figure, readers who hope to know more about the SAB technical details are referred to the published literature (e.g. [26][27]). Assuming the power rail/ground CD is 3F (F: the minimum metal half-pitch) and a metal track requires 5 or 3 signal wires, the ratio of (lithographically defined) logic 5-signal-wire mandrel pitch to the minimum metal pitch is 4.5, while the ratio of 3signal-wire mandrel pitch to the minimum metal pitch is 5.…”

Section: Rigorously Self-aligned Vias and Cuts: Direct Ru Dry Etch An...mentioning

confidence: 99%

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Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)

Chen,

Sun,

Song

et al. 2024

Advanced Etch Technology and Process Integration for Nanopatterning XIII

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In this paper, we first present a brief review of the advanced-node logic device technology development and its key bottleneck/component processes using the existing lithographic capabilities. It is shown to be feasible to evolve into the GAA era with the minimum change of current FinFET process and a minor refining of previously reported Forksheet structure. The concept of hybrid-channel devices is raised which is not only promising for 3D vertical integration, but also offers an optimal tradeoff between device performance and power/leakage. To address the fabrication challenges, a mandrel/spacer engineering based patterning and metallization technology is proposed and its process development results are reported. This patterning & metallization technique can be applied to fabricate advanced logic and SRAM circuits with significantly enhanced pattern density. It is based on the self-aligned multiple patterning (SAMP) wherein either an alternating arrangement of different materials (with high etching selectivity) or multi-color layer decomposition (i.e., splitting of metallization process) is utilized to solve the edge-placement-error (EPE) issue. In particular, we explore various schemes of self-aligned triple patterning (SATP) to identify the potential solution to ensure a satisfactory profile control of the consecutively formed spacers. Moreover, this technique can incorporate rigorously self-aligned vias & cuts (SAVC), and accommodate a metal-layer division (MLD) to split the neighboring metal lines into two vertically staggered layers with their coupling capacitance significantly reduced. The tested metal Ru allows a direct dry etching, which offers a metal recess capability to enable an alternating-material coverage of neighboring metal wires by two different hard masks such that a selective etching can be applied to form rigorously self-aligned vias. Our early-stage process development is focused on SATP process optimization, fabrication of two simplified grating structures, material screening for appropriate etching selectivity, and metal-layerdivision realization. Potential processing challenges such as Ru trench-filling quality and scaling issues of SAVC technology for advanced IC manufacturing will also be discussed.

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Section: Characteristics Of Various Self-aligned Patterning Schemesmentioning

confidence: 99%

Section: Challenges Of Via and Cut Epe Issues And Existing Approachesmentioning

confidence: 99%

Section: Rigorously Self-aligned Vias and Cuts: Direct Ru Dry Etch An...mentioning

confidence: 99%

See 1 more Smart Citation

Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)

Chen,

Sun,

Song

et al. 2024

Advanced Etch Technology and Process Integration for Nanopatterning XIII

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show abstract

“…Errors in earlier process steps can propagate through the subsequent deposition and etch steps resulting in unwanted variations in the final structure created with SAQP. Indeed, the difficulty of controlling the complicated process sequence of SAQP has been noted by many authors 3 , 7 , 8 . One particularly troublesome process-induced variation, the geometric oscillation of the quartered-pitch features, is commonly referred to as pitch-walk 3 …”

Section: Introductionmentioning

confidence: 99%

“…Indeed, the difficulty of controlling the complicated process sequence of SAQP has been noted by many authors. 3,7,8 One particularly troublesome process-induced variation, the geometric oscillation of the quartered-pitch features, is commonly referred to as pitch-walk. 3 Chao et al 6 used optical critical dimension (OCD) data to create a calibrated SAQP measurement model, using a data feedforward approach and verification by reference metrology.…”

Section: Introductionmentioning

confidence: 99%

Bayesian dropout approximation in deep learning neural networks: analysis of self-aligned quadruple patterning

Halle¹,

Dunn²,

Gabor³

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Predictive estimates of the final process outcome(s) of multistep, coupled processes can be difficult to make based on data measured at the various process steps. Self-aligned quadruple patterning (SAQP) is an example of such a process where the prediction of pitch-walk is desired at the various process steps.Aims: Be able to both predict pitch-walk values and the uncertainty in the predicted values at SAQP process steps based on optical critical dimension (OCD) spectroscopy outputs (dimensions, angles, thicknesses, and so on) of mandrel, spacer, and other SAQP features.Approach: Train a neural network using OCD-modeled values of an SAQP process to be able to predict SAQP pitch-walk at early process steps. Use Bayesian dropout approximation (BDA), a methodology using Bayesian inference with stochastic neural networks, to estimate uncertainty in the predicted SAQP pitch-walk.Results: Able to predict pitch-walk values, and the uncertainty in the predictions, of the final SAQP structure after the deposition of the first spacer. The pitch-walk predictions become more accurate as OCD information from the bottom mandrel RIE and bottom spacer are added as inputs to the BDA network. Conclusions:In contrast to a single output value that traditional neural networks would predict, BDA makes an estimated distribution of predictions, where the BDA network gives both a most likely value as well as a distribution of potential values. While this paper shows the power of BDA to predict SAQP pitch walk, it is expected that BDA will be a valuable tool to analyze many data sets in semiconductor manufacturing to help improve yield and performance.

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Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process

Kim,

Kwon,

Jang

et al. 2024

Applied Surface Science

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Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning

Cited by 7 publications

References 0 publications

Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)

Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)

Bayesian dropout approximation in deep learning neural networks: analysis of self-aligned quadruple patterning

Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process

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