Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Shang, Huiling; Lee, Kam‐Leung; Kozlowski, P.; D'Emic, C.; Babich, I.; Sikorski, E.; Ieong, M.; Wong, H.-S. Philip; Guarini, K.W.; Haensch, Wilfried

doi:10.1109/led.2003.823060

Cited by 170 publications

(76 citation statements)

References 3 publications

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“…[4][5][6] The poor device performance is likely caused by the presence of defects near the semiconductor/dielectric interface, such as germanium dangling bonds (DBs) or vacancies, making the study and characterization of these defects a much needed and timely task.…”

Section: 3mentioning

confidence: 99%

Dangling bonds and vacancies in germanium

2013

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The quest for metal-oxide-semiconductor field-effect transistors (MOSFETs) with higher carrier mobility has triggered great interest in germanium-based MOSFETs. Still, the performance of germanium-based devices lags significantly behind that of their silicon counterparts, possibly due to the presence of defects such as dangling bonds (DBs) and vacancies. Using screened hybridfunctional calculations we investigate the role of DBs and vacancies in germanium. We find that the DB defect in germanium has no levels in the band gap; it acts as a negatively charged acceptor with the (0/−1) transition level below the valence-band maximum (VBM). This explains the absence of electron spin resonance observations of DBs in germanium. The vacancy in germanium has a much lower formation energy than the vacancy in silicon, and is stable in a number of charge states, depending on the position of the Fermi-level. We find the (0/−1) and (−1/−2) transition levels at 0.16 eV and 0.38 eV above the VBM; the spacing of these levels is explained based on the strength of intra-orbital repulsion. We compare these results with calculations for silicon, as well as with available experimental data.

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Section: 3mentioning

confidence: 99%

Dangling bonds and vacancies in germanium

2013

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“…Many attempts have been made with different high-K dielectrics including HfO 2 [2], ZrO 2 [3], Al 2 O 3 [4], LaAlO 3 [5] to find a suitable passivation for Ge. Mobilities above 300cm 2 V -1 s -1 have been reported for Ge PMOS while Ge NMOS in the past exhibited poor drive current and low mobility by several demonstrations worldwide [6,7]. Better characterization and understanding of interface traps is required.…”

Section: Introductionmentioning

confidence: 99%

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Kuzum

Krishnamohan

Pethe

et al. 2008

IEEE Electron Device Lett.

186

107

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Abstract-Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D it ) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D it dependency on growth conditions was studied. Minimum D it of of 3x10 11 cm -2 V -1 was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D it is strongly affected by the distribution of oxidation states and quality of the suboxide.

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“…For the integration of Ge into such applications, the challenges faced are poor solubility of dopants, large diffusion coefficients, and the incomplete activation of dopants which have led to high off currents and low on-drive currents in transistors. 4 The poor device performances have all stemmed from the large contact resistances found in the source and drain regions. The large contact resistances to n-Ge have been attributed to Fermi level (E F ) pinning near the valence band which results in large Schottky barrier heights (SBH) independent of the metal work function.…”

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confidence: 99%

Ohmic contacts to n-type germanium with low specific contact resistivity

Gallacher

Velha

Paul

et al. 2012

Applied Physics Letters

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A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 Â± 1.8) Ã\u97 10 -7 Î©-cm 2 for anneal temperatures of 340 Â°C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. Â© 2012 American Institute of Physics

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Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Cited by 170 publications

References 3 publications

Dangling bonds and vacancies in germanium

Dangling bonds and vacancies in germanium

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Ohmic contacts to n-type germanium with low specific contact resistivity

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