Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

Pan, James N.; Woo, C.; Ngo, Minh Van; Yang, Chih-Yuh; Besser, Paul R.; King, Peter; Bernard, Joffre; Adem, Ercan; Tracy, Bryan; Pellerin, John; Qi, Xiang; Lin, Ming-Ren

doi:10.1109/ted.2003.819434

Cited by 4 publications

(3 citation statements)

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“…With these properties, metal gates could be suitable for the conventional gate process, which is much simpler than the replacement gate process. [4][5][6][7][8][9][10] Actually, for the complementary metal oxide semiconductor ͑CMOS͒ fabricated with conventional gate process, dualwork-function metal gates would still be crucial if two different metal gate materials are required. 11,12 The significant challenges are removing the gate materials without damaging the underlying dielectric and simultaneous patterning different gate electrodes.…”

mentioning

confidence: 99%

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Tsui

Huang

2006

J. Electrochem. Soc.

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It has been reported that the work function of nitrided molybdenum ͑MoN͒ can be modulated by the atomic ratio of N/Mo and is suitable for gate material of complementary metal oxide semiconductor devices. In this work, we investigated the characteristics of MoN x prepared by reactively sputtering deposition from the gate electrode point of view. The main phase of the MoN x films is MoN͑200͒. As the N/Mo ratio increases, the microstructure of MoN x film tends to be amorphous-like and the resistivity increases. After high-temperature annealing, the phase remains stable and grain size increases slightly. The HfO 2 film has better immunity to sputtering damage than SiO 2 film; therefore, the sputtering deposition method could be a choice of metal gate deposition as HfO 2 -based dielectric is used. The work function of MoN x increases with the increase of nitrogen content and tends to saturate at the valence band of Si. No Fermi-pinning effect is observed on HfO 2 film. The work function and thermal stability of MoN x show good thermal stability on both SiO 2 and HfO 2 films up to 800°C at least. All of these results indicate that MoN is a good candidate of gate electrode for p-type metal oxide semiconductor field effect transistors ͑pMOSFETs͒ or fully depleted SOI devices.Metal gates are expected to replace polysilicon gates beyond the 45-nm technology node, according to the ITRS roadmap. 1 Suitable work function ͑⌽ m ͒ and chemical inertia of metal gates are the two main criteria for proper threshold voltage and easy device integration, respectively. The work function of metal gates should be 4.1-4.4 eV for bulk n-type metal oxide semiconductor field effect transistors ͑nMOSFETs͒ and 4.8-5.1 eV for bulk p-type MOSFETs ͑pMOSFETs͒. 2,3 The chemical inert metal gates should be thermally stable enough to avoid chemical reaction with gate dielectric and the surrounding insulators during source/drain dopant activation. With these properties, metal gates could be suitable for the conventional gate process, which is much simpler than the replacement gate process. 4-10 Actually, for the complementary metal oxide semiconductor ͑CMOS͒ fabricated with conventional gate process, dualwork-function metal gates would still be crucial if two different metal gate materials are required. 11,12 The significant challenges are removing the gate materials without damaging the underlying dielectric and simultaneous patterning different gate electrodes.Molybdenum ͑Mo͒ films have drawn a lot of attention as a single metal gate electrode of CMOS devices because the work function of Mo on SiO 2 can be adjusted from 4.36 to 4.95 eV. 13-18 Moreover, molybdenum has low resistivity, good thermal stability, and high density, which is a benefit for ion-implantation mask. 15,16 The work function of molybdenum varies with the bulk microstructure, which depends on the deposition and annealing conditions. 17,18 It can also be modulated by the implantation of nitrogen or argon. 2,18-21 The work function of the ͑110͒-oriented Mo film is 4.95 eV. After nitr...

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confidence: 99%

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Tsui

Huang

2006

J. Electrochem. Soc.

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“…4,5 As a result, the electrical and structural properties of TaN x have been the focus of intense research efforts. 4,5 As a result, the electrical and structural properties of TaN x have been the focus of intense research efforts.…”

Section: Introductionmentioning

confidence: 99%

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Choi

Dubourdieu

Kellock

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ferromagnetic and electrical properties in ferromagnetic semiconductor Ti 1 − x Co x O 2 − δ : Sb thin films grown by pulsed laser deposition J. Appl. Phys. 97, 10D326 (2005); 10.1063/1.1855455Electrical properties of Ta-doped SnO 2 thin films prepared by the metal-organic chemical-vapor deposition method Appl.Tantalum nitride (TaN x ) amorphous thin films with varying nitrogen content were grown on SiO 2 /Si using ionized physical vapor deposition. The composition of the films was examined by Rutherford back scattering spectrometry. The carrier density and the resistivity of TaN x films were measured by Hall effect and Van Der Pauw's method. TaN x thin films showed increased electrical resistivity and reduced carrier density as the amount of nitrogen was increased. By controlling the nitrogen content, the carrier density can be tuned within a large range of 10 19 -10 22 cm À3 for 3 and 15 nm thick TaN x films. The metallicity of the films was confirmed using ultraviolet photoemission spectroscopy. For 3 nm thick TaN x films, carrier densities of $10 21 cm À3 were obtained with the N 2 flow rate in the range of 10-15 sccm. Such films have potential application in a quantum metal field effect transistor.

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“…To promote process integration, metal gates have been realized according to two approaches: gate-first [4][5][6] and gate-last. 7,8) The gate-first approach is superior due to its simple fabrication, similar to the conventional poly-gate process. However, its main disadvantages are the issues of contamination of front-end equipment, difficult gate etching, and integrity of the gate stack during high-temperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Investigation of NiSi Fully-Silicided Gate on SiO₂ and HfO₂ for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors

Huang¹,

Tsui²

2006

Jpn. J. Appl. Phys.

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Effective work function modulation (È m,eff ) and the thermal/electrical stability of NiSi fully-silicided (FUSI) gates on SiO 2 and HfO 2 are investigated. A new method, implant-to-silicide, differing from the pre-doped method, is used to realize È m,eff adjustments. The È m,eff of NiSi FUSI gates on SiO 2 can be tuned by incorporating BF 2 þ or P þ dopants after silicidation. Nevertheless, the Fermi-pinning effect was observed in the NiSi/HfO 2 gate which limits the È m,eff adjustment. A thin SiO 2 interfacial layer can reduce the Fermi-pinning effect. A NiSi FUSI gate on SiO 2 is thermally stable up to 600 C. The thermal stress and impurity diffusion after a prolonged 600 C annealing degraded the oxide integration. The temperature of the post-silicidation process should be as low as possible to lessen the thermal stress and impurity diffusion.

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Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

Cited by 4 publications

References 3 publications

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Investigation of NiSi Fully-Silicided Gate on SiO₂ and HfO₂ for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors

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Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition

Cited by 4 publications

References 3 publications

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application

Tunable electrical properties of TaNx thin films grown by ionized physical vapor deposition

Investigation of NiSi Fully-Silicided Gate on SiO2 and HfO2 for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors

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Investigation of NiSi Fully-Silicided Gate on SiO₂ and HfO₂ for Applications in Metal–Oxide–Semiconductor Field-Effect Transistors