Self aligned passivation of Cu in Cu/Cr, Cu/V and Cu/Ta multilayers

Abstract

We compare Cu/M/Si02 layers (M=Cr,V and Ta) multilayers that were deposited on Si substrates. Sample resistance measurements carried out during annealing in 80%N2+20%H2 , N2 and Ar environments. Resistivity measurements, SEM observations, RBS and AES spectroscopies from annealed samples showed good diffusion barrier of Cr and V but rather poor for Ta buffer layers. This is due to amorphous nature of Cr films and formation of continuous Cu overlayer.