Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Vu, D.P.; Sono, Atsuhiro

doi:10.1049/el:19870261

Cited by 9 publications

(3 citation statements)

References 1 publication

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“…The early SOS substrates suffered from reduced electron mobility due to defects at the silicon: sapphire interface. With the introduction of SOI wafers, MESFET channel layers with higher electron mobility became available, leading to enhanced transconductance compared to earlier devices [16,17]. The use of SOI substrates eliminated many of the problems associated with off-state leakage currents allowing for near-ideal sub-threshold performance [18].…”

Section: Silicon Based Mesfetsmentioning

confidence: 99%

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

LEPKOWSKI¹,

WILK²,

GHAJAR³

et al. 2013

Selected Topics in Electronics and Systems

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Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (ID SAT ≥ 100mA/mm), high operating frequency ( fmax >35 GHz) or enhanced breakdown voltage (VBD >25V). The design flexibility provided by the SOI MESFETs, coupled with the high performance of ULSI CMOS at the 45nm node will enable a variety of analog, RF and mixed signal applications.

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Section: Silicon Based Mesfetsmentioning

confidence: 99%

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

LEPKOWSKI¹,

WILK²,

GHAJAR³

et al. 2013

Selected Topics in Electronics and Systems

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show abstract

“…Various groups have reported silicon MESFETs fabricated using either bulk [2], [3] or SOI substrates [3], [4], [5], [6]. These devices were fabricated using CMOS compatible processing steps and used tungsten, aluminum or metal silicides for the Schottky gate.…”

Section: Soi Mesfet Fabricationmentioning

confidence: 99%

Total dose radiation response of CMOS compatible SOI MESFETs

Spann

Kushner

Thornton

et al. 2005

IEEE Trans. Nucl. Sci.

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Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi 2 Schottky gate and display good depletion mode characteristics with a threshold voltage of 0 5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.Index Terms-MESFETs, silicon-on-insulator technology, X-ray effects.

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“…Other silicon-based MESFETs have been demonstrated using CMOS compatible process steps, but none of them used a standard CMOS process flow [11-14]. The key step in the MESFET fabrication is the use of the self-aligned silicide (salicide) process to form the Schottky gate [8].…”

Section: Introductionmentioning

confidence: 99%

Silicon on insulator MESFETs for RF amplifiers

Wilk

Balijepalli

Ervin

et al. 2010

Solid-State Electronics

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CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz. There is no degradation in device performance up to its breakdown voltage, which greatly exceeds that of CMOS devices on the same process. Other figures of merit of relevance to RF front-end design are presented, including the maximum stable gain and noise figure. An accurate representation of the device in SPICE has been developed using the commercially available TOM3 model. Using the SOI MESFET model, a source degenerated low noise RF amplifier targeting operation near 1GHz has been designed. The amplifier was fabricated on a PCB board and operates at 940MHz with a minimum NF of 3.8dB and RF gain of 9.9dB while only consuming 5mW of DC power.

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Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Cited by 9 publications

References 1 publication

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE

Total dose radiation response of CMOS compatible SOI MESFETs

Silicon on insulator MESFETs for RF amplifiers

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