Self-Aligned Top-Gate IGZO TFT With Stepped Structure for Suppressing Short Channel Effect

Lee, Jin Kyu; An, Soobin; Lee, Soo-Yeon

doi:10.1109/led.2023.3317403

IEEE Electron Device Lett.

2023

DOI: 10.1109/led.2023.3317403

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Self-Aligned Top-Gate IGZO TFT With Stepped Structure for Suppressing Short Channel Effect

Jin Kyu Lee,

Soobin An,

Soo-Yeon Lee

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Cited by 3 publications

References 23 publications

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Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method

Lee,

Katware

et al. 2024

ACS Appl. Mater. Interfaces

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The determination of field-effect mobility in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) is pivotal for advancing high-performance electronic devices. However, accurately evaluating the field-effect mobility in IGZO-TFTs with short channel lengths of less than a few micrometers poses a formidable challenge. This difficulty arises due to the increasing significance of contact resistance in the total resistance as the channel length decreases. Consequently, increasing contact resistance can lead to inaccurate sheet resistance values, resulting in overestimating critical parameters, such as mobility and contact resistance, during device evaluations. Therefore, a precise method for extracting sheet resistance, an intrinsic channel characteristic, is imperative for short-channel IGZO TFTs. Herein, a gated van der Pauw (gVDP) method was employed to extract sheet resistance precisely and independently of contact resistance. This contact-resistance-independent approach mitigates the risk of overestimating charge behaviors in IGZO TFTs. Furthermore, it facilitates precise evaluations of intrinsic channel mobility, enabling accurate predictions of the maximum performance of devices with short channels.

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Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method

Lee,

Katware

et al. 2024

ACS Appl. Mater. Interfaces

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show abstract

Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

Jang,

Lee,

Mok

et al. 2023

RSC Adv.

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Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics

Moon,

Im,

Yun

et al. 2024

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Self-Aligned Top-Gate IGZO TFT With Stepped Structure for Suppressing Short Channel Effect

Cited by 3 publications

References 23 publications

Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method

Addressing Mobility Overestimation in Short-Channel IGZO TFTs Using the Gated Van der Pauw Method

Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics

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