Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Abstract

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/ Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ~ 28⋅5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors

“…A nanostructured surface can be obtained either by the direct growth of nanostructures, that is, by chemical vapor deposition, physical vapor deposition (PVD) including sputtering/evaporation/epitaxial growth method, etc., or via engineering the flat surfaces to develop nanostructures using wet/dry etching processes. − Kumar et al proposed the growth of InN- and GaN-based self-assembled flower-shaped nanostructures via molecular beam epitaxy (MBE), while Aggarwal et al reported nanoflower decoration on GaN surfaces to enhance light absorption in the fabricated UV PDs. However, compared to growth-related challenges, surface engineering is a simple and convenient approach to develop ordered nanostructures.…”

Nitrogenated amorphous InGaZnO thin film transistor

“…These peak positions clearly differ from N1s in GaN ͑397.3 and 397.8 eV͒ 11 and InN ͑396.5 eV͒. 12 This indicates that the nitrogen species in the a-IGZO:N thin film has an electronic state similar to the one in Zn 3 N 2 . In order to investigate the uniformity of device characteristics, five different measuring points were sampled for each specimen.…”