Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions

Park, Y.S.; Lee, Seungho; Oh, Jae‐Eung; Park, Chang-Mo; Kang, Tae‐Won

doi:10.1016/j.jcrysgro.2005.05.058

Cited by 73 publications

(64 citation statements)

References 8 publications

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“…This result agrees with the results reported over the last few years [9,10], which shows that GaN nanorods grow both axially and laterally with growth time.…”

Section: Resultssupporting

confidence: 93%

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (001) by MBE

Seo

Hasegawa

Asahi

2009

Journal of Crystal Growth

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“…This result agrees with the results reported over the last few years [9,10], which shows that GaN nanorods grow both axially and laterally with growth time.…”

Section: Resultssupporting

confidence: 93%

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (001) by MBE

Seo

Hasegawa

Asahi

2009

Journal of Crystal Growth

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“…Therefore, it is an ideal candidate for the realization of LEDs emitting from infrared to ultraviolet as well as high efficiency solar cells. The catalyst free molecular beam epitaxy ͑MBE͒ growth of GaN NWs on bare Si͑111͒ was investigated by several groups, [3][4][5][6][7][8][9] and the capability of fabricating III-nitride NW devices using single NWs ͑Refs. 10-12͒ and NW ensembles 13,14 has been proven.…”

mentioning

confidence: 99%

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke

Schumann

Limbach

et al. 2011

Applied Physics Letters

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Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

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“…By controlling the III/V ratio and growth time, nanorods, protruding from a columnar film base (compact region), were created. Detailed growth conditions have been reported elsewhere [5][6][7]. The formation of the nanorods was confirmed by using a high-resolution field emission scanning electron microscope (FESEM).…”

Section: Methodsmentioning

confidence: 99%

Optical properties of bulk‐like GaN nanorods grown on Si(111) substrates by rf‐plasma assisted molecular beam epitaxy

Park

Kang

et al. 2010

Phys. Status Solidi (c)

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We have investigated the optical properties of bulk‐like GaN nanorods by cathodoluminescence measurements at room temperature. The bulk‐like nanorods were grown on a Si (111) substrate by rf‐plasma assisted molecular beam epitaxy and are characterized be being surrounded by a compact region. A weak and broad emission line near 3.36 eV was observed at an accelerating voltage of 5 kV. This emission occurs at a lower energy than the emission from unstrained GaN nanorods that protrude from the compact region. Upon increasing the electron beam energy, and hence investigating regions deeper in the sample, the peak emission energy redshifts due to the strain at the substrate interface. The behaviour of the emission line is further investigated with cathodoluminescence measurement on single nanorod's (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Self-assembled GaN nano-rods grown directly on (111) Si substrates: Dependence on growth conditions

Cited by 73 publications

References 8 publications

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (001) by MBE

Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (001) by MBE

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Optical properties of bulk‐like GaN nanorods grown on Si(111) substrates by rf‐plasma assisted molecular beam epitaxy

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