Self-assembled InAs quantum dots on cross-hatch InGaAs templates: Excess growth, growth rate, capping and preferential alignment

Kanjanachuchai, Songphol; Maitreeboriraks, M.; Thet, Cho Cho; Limwongse, T.; Panyakeow, Somsak

doi:10.1016/j.mee.2009.01.020

Cited by 11 publications

(5 citation statements)

References 23 publications

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“…Because pyramid chains delineate line dislocations, the observed droplet motion must be, at least partially, guided by the buried dislocations by virtue of surface strain fields. The effects that subsurface dislocations have on surface adatoms are known to exist in epitaxy: dislocation networks have been used to guide the nucleation of quantum dots. − Our results demonstrate the equivalent effects on evaporating surfaces.…”

mentioning

confidence: 66%

Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

Kanjanachuchai

Euaruksakul

2013

ACS Appl. Mater. Interfaces

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Thermal decomposition of GaAs (111)A and (111)B surfaces in ultrahigh vacuum results in self-running Ga droplets. Although Ga droplets on the (111)B surface run in one main direction, those on the (111)A surface run in multiple directions, frequently taking sharp turns and swerving around pyramidal etch pits, leaving behind mixed smooth-triangular trails as a result of simultaneous in-plane driving and out-of-plane crystallographic etching. The droplet motion is partially guided by dislocation strain fields. The results hint at the possibilities of using subsurface dislocation network and prepatterned, etched surfaces to control metallic droplet motion on single-crystal semiconductor surfaces.

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mentioning

confidence: 66%

Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

Kanjanachuchai

Euaruksakul

2013

ACS Appl. Mater. Interfaces

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“…[13][14][15] These effects have been tentatively explained as due to the reduced mismatch between QDs and InGaAs layers, to the undulated InGaAs surface known as the Cross-Hatch Pattern (CHP) and to the presence of extended defects in the InGaAs relaxed buffers. [13][14][15][16] Hence, it seems important to gain more fundamental knowledge on the peculiarities of the growth of InAs QDs on InGaAs relaxed layers, in order to comprehend in depth the role of different characteristics of MBs on QD properties and envision more advanced designs of metamorphic InAs/InGaAs QD nanostructures. Moreover, as we show further in this article, the InAs/In x Ga 1Àx As system could be considered as a useful system for experimental testing of theoretical models of the selfassembly physical process, as it allows to independently and separately control the QD-MB mismatch f and the MB composition x.…”

Section: Introductionmentioning

confidence: 99%

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

Seravalli¹,

Trevisi²,

Frigeri³

2012

CrystEngComm

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We study the growth by Molecular Beam Epitaxy of InAs quantum dots (QDs) on InGaAs metamorphic buffers (MBs), allowing independent control of the mismatch f between QDs and MBs (7.2% > f > 4.5%) and the In content x of the surface underlying QDs (0 # x # 0.35), taking advantage of the dependence of MB strain relaxation on MB thickness. AFM characterization indicated an enlargement of QD diameters for x $ 0.35, while changing f had negligible effects. The twodimensional (2D) to three-dimensional (3D) critical thickness q c was measured by RHEED: for fixed x, q c increases with reducing f due to the reduction of the elastic energy of the 2D InAs wetting layer (WL), in agreement with literature model predictions. For fixed f, q c reduces with increasing x, an effect not reported so far that we discuss in terms of: (i) enhanced surface diffusion of In atoms on In-richer surfaces and (ii) In-richer WLs in the picture of 2D-3D transition due to In segregation in WLs. These results indicate that metamorphic QDs provide interesting possibilities to control structure properties and can be a model system to investigate the physical mechanisms of the 2D-3D transition.

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“…QDs on InGaAs CHPs leads to spontaneous alignment of QDs along the cross-hatches. Main parameters used to control/optimize QDs alignment are growth interruption which affects the orderliness of QDs on the hatches [16], crosshatch layer thickness, and composition which affect MD line density [17], growth rates, excess growth, and the use of spacer layer prior to QD growth [18]. The origin and evolution of InAs QD alignment on InGaAs CHPs, which apply to other material systems, are now well understood [19,20].…”

Section: Quantum Dots On Cross-hatch Patterns Growth Of Inasmentioning

confidence: 99%

InGaAs Quantum Dots on Cross‐Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

Limwongse

Thainoi

Panyakeow

et al. 2013

Journal of Nanomaterials

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Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

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Self-assembled InAs quantum dots on cross-hatch InGaAs templates: Excess growth, growth rate, capping and preferential alignment

Cited by 11 publications

References 23 publications

Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces

2D–3D growth transition in metamorphic InAs/InGaAs quantum dots

InGaAs Quantum Dots on Cross‐Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

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