Self‐Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices

Abstract

In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La2O3) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La2O3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La2O3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott–Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n‐type semiconducting nature of the fabricated La2O3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio‐synaptic properties such as potentiation‐depression, excitatory post‐synaptic currents, and paired‐pulse facilitation. It is demonstrated that the fabricated devices are non‐ideal memristors based on double‐valued charge‐flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary‐based RS mechanism is suggested. The present results assert that La2O3 is a promising solid electrolyte for memory and brain‐inspired applications.

ZnO Nanorod/Multiwalled Carbon Nanotube Composites Sensitized with Cu-Based Metal–Organic Frameworks as Photoanodes for Solar-Driven Water Splitting

“…In addition, the present case includes the time series analysis (TSA) model to predict and forecast the chronoamperometric stability beyond 800 s for the optimized ZC-0.1/CH 3 –Cu-BTC NC-based photoanode. TSA is an important statistical technique that can be used for the modeling, prediction, and forecasting of electronic devices. , At the outset, the present work has used the Dickey-Fuller (ADF) test to check the stationarity in the time series. , The value of the ADF test along with the p -value is found to be −9.1556 (0.01), and it implies that the present time series of the ZC-0.1/CH 3 –Cu-BTC NC-based photoanode is stationary. To model, predict, and forecast the chronoamperometric stability of the ZC-0.1/CH 3 –Cu-BTC NC-based photoanode, we used the Holt-Winters exponential smoothing (HWES) technique.…”

“…62,63 At the outset, the present work has used the Dickey-Fuller (ADF) test to check the stationarity in the time series. 64,65 The value of the ADF test along with the p-value is found to be…”

NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

“…Figure 4(a) indicates that the device can withstand up to 10 4 endurance cycles. The on/off ratio or memory window of the Ag/NFO/FTO was ∼11, which is enough for a data storage device [37]. The device can retain the LRS and HRS up to 6 × 10 3 s (figure 4(b).…”

Stretchable and neuromorphic transistors for pain perception and sensitization emulation

“…As for the type of signal stimulation, artificial synaptic devices can be mainly classified into electronic synapses, photonic synapses, and optoelectronic synaptic devices. 7–11 As one of the classes of three-terminal devices, electrolyte-gated transistors can be used to construct artificial neurons, where ions in the electrolyte can migrate directionally when an electrical pulse is applied to the gate, regulating the channel current concurrently. 12–14 This process can be used to mimic the transmission of releasing neurotransmitters into the synaptic cleft after the presynaptic neuron reaches an action potential, which would trigger a change in postsynaptic neuron potential.…”