2007
DOI: 10.1016/j.physe.2006.12.031
|View full text |Cite
|
Sign up to set email alerts
|

Self-assembled mesoporous silicon in the crossover between irregular and regular arrangement applicable for Ni filling

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
34
0
1

Year Published

2008
2008
2015
2015

Publication Types

Select...
6

Relationship

4
2

Authors

Journals

citations
Cited by 44 publications
(35 citation statements)
references
References 13 publications
0
34
0
1
Order By: Relevance
“…1). Fourier transform images of the top view give a four-fold symmetry shown previously [8]. By varying the current density j between 50 mA/cm 2 and 125 mA/cm 2 , the average pore-diameter d can be adjusted between 30 nm and 100 nm whereas the pore-distance decreases from 60 nm to 45 nm.…”
Section: Fabrication Of the Nanocompositementioning
confidence: 55%
“…1). Fourier transform images of the top view give a four-fold symmetry shown previously [8]. By varying the current density j between 50 mA/cm 2 and 125 mA/cm 2 , the average pore-diameter d can be adjusted between 30 nm and 100 nm whereas the pore-distance decreases from 60 nm to 45 nm.…”
Section: Fabrication Of the Nanocompositementioning
confidence: 55%
“…As template material a porous silicon matrix is used, obtained by anodization of a highly n-doped silicon wafer in an aqueous hydrofluoric acid solution. The morphology of the matrix depends on the anodization parameters [6] whereas in the introduced work the pore-diameters are typically 60 nm leading to a porosity of about 40%. The pores are oriented, grown perpendicular to the surface and clearly separated from each other.…”
Section: Methodsmentioning
confidence: 99%
“…The detailed description of the formation process is described in reference [9]. These PSmatrices are utilized for metal deposition within the channels.…”
Section: Methodsmentioning
confidence: 99%