2021
DOI: 10.1002/admi.202101460
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Self‐Assembled Nanowrinkle‐Network‐Structured Transparent Conductive Zinc Oxide for High‐Efficiency Inorganic Light‐Emitting Diodes

Abstract: A ZnO nanowrinkle network (NWN) film is applied as a transparent conductive electrode (TCE) to improve the light extraction efficiency of inorganic light‐emitting diodes (LEDs). The NWN structures in sol–gel‐derived ZnO films are spontaneously formed by the evaporation of the solvent during prebaking to achieve the gelation of the sol–gel ZnO film. Despite the NWN structure, the optical transmittance of the NWN‐ZnO film prebaked at 130 °C is maintained at ≈92% with respect to that of unmodified glass. However,… Show more

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Cited by 3 publications
(5 citation statements)
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“…This result is consistent with the temperature‐dependent characteristics of the NWN formation of the sol–gel‐derived ZnO transparent conductive electrode grown on GaN‐based light‐emitting diode epi‐wafer. [ 29 ] It implies that the formation of NWNs in the sol–gel‐derived ZnO film is primarily affected by the prebake temperature, rather than the substrates. In general, the formation of the nanowrinkle structure in ZnO is known to be caused by stress relaxation during the low‐temperature prebaking process, where the solvent evaporates and creates compressive stress due to the difference in thermal expansion coefficients.…”
Section: Resultsmentioning
confidence: 99%
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“…This result is consistent with the temperature‐dependent characteristics of the NWN formation of the sol–gel‐derived ZnO transparent conductive electrode grown on GaN‐based light‐emitting diode epi‐wafer. [ 29 ] It implies that the formation of NWNs in the sol–gel‐derived ZnO film is primarily affected by the prebake temperature, rather than the substrates. In general, the formation of the nanowrinkle structure in ZnO is known to be caused by stress relaxation during the low‐temperature prebaking process, where the solvent evaporates and creates compressive stress due to the difference in thermal expansion coefficients.…”
Section: Resultsmentioning
confidence: 99%
“…In general, the formation of the nanowrinkle structure in ZnO is known to be caused by stress relaxation during the low‐temperature prebaking process, where the solvent evaporates and creates compressive stress due to the difference in thermal expansion coefficients. [ 29 ] In particular, at prebake temperatures above 125 °C, the 2‐methoxy ethanol solvent evaporation and thermal expansion coefficient difference between the sapphire substrate and ZnO film create compressive stress on the film, leading to the formation of wrinkle structures. The formation of significant wrinkle structures occurs at the prebake temperature of 150 °C.…”
Section: Resultsmentioning
confidence: 99%
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“…Zinc oxide (ZnO) is another candidate material to replace ITO, considering ITO’s status as a rare earth element. ZnO has semiconductor properties and can be utilized as a TCE through the introduction of impurities such as aluminum (Al) and gallium (Ga) to enhance its conductivity [ 15 , 16 ]. However, achieving electrical conductivity comparable to that of metallic ITO remains a significant challenge.…”
Section: Introductionmentioning
confidence: 99%