Self‐Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective‐Area Atomic Layer Deposition of Iridium

Färm, Elina; Kemell, Marianna; Ritala, Mikko; Leskelä, Markku

doi:10.1002/cvde.200604219

Cited by 62 publications

(49 citation statements)

References 16 publications

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“…Färm et al 56,58 successfully demonstrated a preparation method for the passivation and patterning of octadecyltrimethoxysilane (CH 3 (CH 2 ) 17 Si(OCH 3 ) 3 self-assembled monolayers (SAM) for the prevention of iridium ALD process at 225 C with Ir(acac) 3 and O 2 as precursors. This research seems to be the rst attempt to grow iridium by selective-area ALD using a patterned SAM.…”

Section: 52mentioning

confidence: 99%

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Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

et al. 2015

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Section: 52mentioning

confidence: 99%

“…Complete experimental conrmation of this scheme can be found in ref. 32 and nanotechnology 56,58,118 applications. In this section we focus on the features of thin lm growth on complicated 3D structures that is important for microelectronics and nanotechnology applications.…”

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confidence: 99%

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

et al. 2015

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“…65 For example, SAMs have been shown to be effective masking agents for the ALD of HfO 2 , 66 Pt, 67 TiO 2 , 68 ZrO 2 , 69 ZnO, 70 Ir, 71 Co, 72 and Ru, 73 where in most cases a SAM with a uCH 3 termination was employed. A large fraction of this work does not involve growth on the organic but instead the use of a SAM to block the growth of an inorganic thin film.…”

Section: Introductionmentioning

confidence: 99%

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Hughes¹,

Engstrom²

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Interactions between radical growth precursors on plasma-deposited silicon thin-film surfacesThe interfaces between inorganic and organic materials are important to a wide variety of technologies. A significant challenge concerns the formation of these interfaces when the inorganic layer must be grown on a pre-existing organic layer. In this review the authors focus on fundamental aspects of inorganic-organic interface formation using transition metal coordination complexes and atomic layer deposition. First, the authors discuss aspects of the synthesis and characterization of ultrathin interfacial organic layers, formed mostly on SiO 2 and possessing a variety of functional groups, including layers with a branched microstructure. The authors go on to discuss the reactions of transition metal coordination complexes with these layers. A number of factors control the uptake of the transition metal complex and the composition of the adsorbed species that are formed. These include the identity, density, and dimensionality or spatial distribution of the functional groups. At room temperature, adsorption on layers that lack functional groups results in the penetration of the organic layer by the transition metal complex and the reaction with residual uOH at the organic/SiO 2 interface. Adsorption on layers with a mostly two-dimensional arrangement of reactive functional groups results in the formation of molecular "bipods," where the surface bound functional groups react with the complex via two ligand exchange reactions. In contrast, for layers that possess a high density of functional groups arranged three dimensionally, the transition metal complex can be virtually stripped of its ligands. Atomic layer deposition on interfacial organic layers also depends strongly on the density and accessibility of reactive functional groups. On surfaces that possess a high density of functional groups, deployed two dimensionally, growth via atomic layer deposition is initially weakly attenuated, mostly uniform and smooth, and eventually evolves to growth characteristic of unmodified SiO 2 . Growth on layers that lack sufficient densities of functional groups is initially strongly attenuated, in contrast, and the resulting films are rough, severely islanded and three dimensional. As a consequence, there is a correlation between the strength of the initial attenuation in the rate of growth and the thin film morphology. Correlations between the initial uptake of the transition metal complex by the organic layer and the initial rate of thin film growth are less direct, however, as the composition and structure of the chemisorbed species must also be considered.

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“…To address this limitation, several researchers have investigated the formation of SAMs by vapor-phase deposition [50,52,62,[102][103][104][105]. The vapor phase provides several advantages over a liquid-phase process.…”

Section: Vapor-phase Depositionmentioning

confidence: 99%

Nanopatterning by Area‐Selective Atomic Layer Deposition

Lee

Bent

2011

Atomic Layer Deposition of Nanostructured Materials

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In conventional device fabrication, patterning is a top-down process based largely on photolithography and etching and is a main bottleneck for device downscaling. Atomic layer deposition (ALD) can provide an alternative bottom-up method for patterning when used in conjunction with self-assembled materials and selective chemistries. As presented in previous chapters, ALD is a powerful technique for depositing thin films for nanoscale device fabrication thanks to its excellent conformality, atomic scale thickness controllability, and large-area uniformity. Film growth controlled by surface reactions is one of the inherent properties of ALD. Because in an ideal ALD process, all of the precursors used for ALD react with each other only at the surface, highly conformal films can be deposited even inside complex 3D structures. By taking advantage of this inherent surface reaction property, ALD can be utilized for patterning based on a bottom-up process. In the following chapter, selective deposition methods will be presented. The contents include the surface modification techniques that are employed to exploit the surface reaction properties of ALD and related patterning processes with reported results. Concept of Area-Selective Atomic Layer DepositionFilm growth by ALD begins with formation of nuclei through a reaction of precursor molecules and surface species. Once nuclei are formed on a surface, the growth of the film may proceed by growth and coalescence of the nuclei, whereas if no nucleation occurs no film will be deposited. Therefore, the deposition characteristics of ALD strongly depend on the surface properties of the substrate. For example, in many cases, the nucleation of ALD is easy on hydrophilic OH-terminated substrates (e.g., SiO 2 ), while it is difficult on hydrophobic H-terminated surfaces (e.g., Si) [1][2][3][4]. Similarly, a nucleation delay in ALD, typically called the incubation time, is due to difficulty of nucleation at the surface. The nucleation delay and the variability of the growth characteristics depending on the surface can be problematic in typical thin

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Self‐Assembled Octadecyltrimethoxysilane Monolayers Enabling Selective‐Area Atomic Layer Deposition of Iridium

Cited by 62 publications

References 16 publications

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

Interfacial organic layers: Tailored surface chemistry for nucleation and growth

Nanopatterning by Area‐Selective Atomic Layer Deposition

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