Self-assembled rare-earth silicide nanowires on Si(001)

Nogami, J.; Liu, B. Z.; Katkov, M. V.; Ohbuchi, Chigusa; Birge, Norman O.

doi:10.1103/physrevb.63.233305

Cited by 230 publications

(177 citation statements)

References 11 publications

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“…A small lattice tilt of ≤1° was also observed with the Si(001) substrate [18]. In addition, previous scanning tunneling microscopy (STM) studies [19,20] showing regular trenches about 3 nm wide indicate the existence of a set of misfit dislocations along <110> Si // < 0 1 1 2 > β . β-DySi 2 nanowires grown on a Si(110) surface have the same OR with the substrate as the Si (111) case, but the interface is parallel to the plane (111) Si in a 'endotaxy' fashion [21].…”

Section: Introductionmentioning

confidence: 75%

Heteroepitaxy Crystallography in Low Dimensional Nanostructures

Qiu¹,

Zhang

Kelly

2011

SSP

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Abstract. Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying ∆g parallelism rules and edge-to-edge matching (E2EM) model in β-DySi 2 /Si and CoSi 2 /Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.

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Section: Introductionmentioning

confidence: 75%

Heteroepitaxy Crystallography in Low Dimensional Nanostructures

Qiu¹,

Zhang

Kelly

2011

SSP

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“…It is generally believed that the high length-width ratio of NWs is the result of the anisotropic lattice mismatch between ReSi 2 and Si. 2,3 However, some crystallographic features varying with substrate orientations have not been fully understood in ReSi 2 / Si systems. For example, hexagonal ͑hcp͒ DySi 2 NWs grown on Si͑111͒ have a flat interface parallel to Si͑111͒, 6 while a stepped interface inclined at 3°-5°to the substrate was always observed on Si͑001͒.…”

Section: Crystallography Of Self-assembled Dysi 2 Nanowires On a Si Smentioning

confidence: 99%

“…© 2009 American Institute of Physics. ͓DOI: 10.1063/1.3085772͔ Self-assembled rare-earth silicide nanowires ͑NWs͒ have been intensively investigated in the past decade [1][2][3][4] due to their lower Schottky-barrier height 5 than refectory metal silicides. It is generally believed that the high length-width ratio of NWs is the result of the anisotropic lattice mismatch between ReSi 2 and Si.…”

Section: Crystallography Of Self-assembled Dysi 2 Nanowires On a Si Smentioning

confidence: 99%

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Qiu

Zhang

Kelly

2009

Applied Physics Letters

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A recently developed crystallographic model, edge-to-edge matching, has been used to interpret the crystallographic features of self-assembled DySi2 nanowires on Si substrates. All of the observed orientation relationships (ORs) and interface orientations of the DySi2 on Si(111), (001), and (110) were predicted by one criterion. The calculated results are fully consistent with the previous high-resolution transmission electron microscopy observations. The preference for each OR and interface was discussed in terms of the competition between thermodynamics and kinetic factors. This model can also be used in other epitaxy systems and has strong potential for future nanostructure design.

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“…The growth mode during the thin film reaction modifies the epitaxial growth. Sometimes, the StranskiKrastanov type growth occurs during the growth of epitaxial metal silicide films and silicide nanostructures [6].…”

Section: Introductionmentioning

confidence: 99%

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

Molnár

2013

J. Mater. Res.

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A special type of epitaxial growth appears during solid phase thin film reactions, where the reaction product grows epitaxially on the substrate. Some metal silicide layers and nanostructures are known to develop such epitaxial structures. In this study iron silicide was used to study the effect of the growth mode on the epitaxial growth. Strain-induced, self-assembled iron silicide nanostructures were grown on Si(001) substrates by electron gun evaporation of 1.0 nm iron and subsequent annealing at 500-850°C for 60 minutes. The growth processes were checked by reflection high energy electron diffraction, and the formed structures were characterized by scanning electron microscopy and optical microscopy. The iron silicide nanostructures were oriented in square directions epitaxially fitting to the surface of Si(001). The shape and size of the nanostructures depended on the annealing temperature. In some cases the nanoparticles were arranged in circles. This might be the direct consequence of a nucleation controlled type transition of iron monosilicide to iron disilicide phase at nanoscale.

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Self-assembled rare-earth silicide nanowires on Si(001)

Cited by 230 publications

References 11 publications

Heteroepitaxy Crystallography in Low Dimensional Nanostructures

Heteroepitaxy Crystallography in Low Dimensional Nanostructures

Crystallography of self-assembled DySi2 nanowires on a Si substrate

Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)

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