Self-assembling conditions of 1O4Ca nanoclusters in ZnTe:(Ca, O)

Elyukhin, V.A.; Peralta, P. Rodríguez

doi:10.1016/j.spmi.2009.07.009

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Cited by 4 publications

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“…Therefore, we can expect the formation of excitons bound to 1As4Ga clusters embedded in wide band gap AlN:(Ga, As). SA of similar tetrahedral clusters was described for a number of III-V and II-VI semiconductors double doped with isoelectronic impurities [6][7][8][9]. This study is devoted to SA of isoelectronic impurity clusters in triple doped semiconductors that are not considered yet.…”

Section: Introductionmentioning

confidence: 99%