Self-assembly and growth mechanism of N-polar knotted GaN nanowires on c-plane sapphire substrate by Au-assisted chemical vapor deposition

Li, Pengkun; Xiong, Tinghui; Sun, Shucun; Chen, Chenlong

doi:10.1016/j.jallcom.2020.154070

Cited by 7 publications

(5 citation statements)

References 68 publications

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“…The typical PL spectra shown in Figure b demonstrate a sharp and symmetrical UV emission peak centered at 362.0 nm (3.425 eV) with a full width at half-maximum of 16.2 nm, indicating outstanding optical properties. The UV emission peak originates from the near-band edge free exciton emission . The intense band edge peak at 362.0 nm is consistent with the strain-free GaN .…”

Section: Resultssupporting

confidence: 65%

“…The UV emission peak originates from the near-band edge free exciton emission. 37 The intense band edge peak at 362.0 nm is consistent with the strain-free GaN. 43 The nonpolar GaN nanorod arrays have excellent optical quality and are nearly strained at room temperature, which matches well with the results of the Raman.…”

Section: Growth Modulation Forsupporting

confidence: 56%

“…Figure schematically shows the formation process of the nonpolar GaN nanorod arrays at different growth periods. In the heating stage, the Au thin layer deposited by magnetron sputtering on the surface of the γ-LiAlO 2 substrate grows into liquid Au nanodroplets owing to its high surface tension (as shown in Figure a,b). , At the initial stage of growth, GaN nanostructures follow the VLS growth mechanism. A steady stream of Ga species from the vapor combines with Au particles to form Au–Ga alloys (Figure c), which then absorb N atoms produced by ammonia.…”

Section: Resultsmentioning

confidence: 99%

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Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Li,

Wang,

Chen

et al. 2024

Crystal Growth & Design

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The undesirable effects of the degraded device performance and shorter lifetime caused by the polarization electric field induced by polar GaN have contributed to an increasing interest in the fundamental research and promising applications of nonpolar GaN. Herein, we demonstrate a strategy to construct high-quality arrays of well-aligned nonpolar GaN nanorods on the Au-coated (100) γ-LiAlO 2 substrates by the chemical vapor deposition method. During the growth process, the Au particles that were originally at the tips of the nanorods were found to gradually disappear with time. The disappearance of Au particles solved the problem of catalyst contamination and also demonstrated an interesting growth mechanism: whereas the traditional vapor−liquid− solid dominated the initial growth stage, the Au catalyst began to migrate and detach under the relatively Ga-rich condition, and then the vapor−solid controlled the subsequent growth. The E 2 (high) phonon peak (567.7 cm −1 ) and the strong ultraviolet emission peak (362.0 nm) indicate that the nonpolar GaN nanorods are virtually strain-free and have a high crystallization quality. Additionally, the effects of NH 3 and the thickness of Au films on the growth of GaN nanorods were thoroughly investigated. The well-arranged nonpolar GaN nanorod arrays with excellent crystal quality will provide a referable nanomaterial choice for highperformance, high-efficiency nonpolar nanodevices.

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Section: Resultssupporting

confidence: 65%

Section: Growth Modulation Forsupporting

confidence: 56%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Li,

Wang,

Chen

et al. 2024

Crystal Growth & Design

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“…[23][24][25][26] Unfortunately, the electronic and optical properties of the only wurtzite structure GaN have been reported over the last years. 27,28 Although the cubic GaN has been reported, 29 the structural, electronic and optical properties of the bulk cubic GaN have not well understood. Naturally, the overall properties of a semiconductor are markedly influenced by the defect.…”

Section: Introductionmentioning

confidence: 99%

“…It is obvious that the physical and chemical properties of a semiconductor are related to the structural feature 23‐26 . Unfortunately, the electronic and optical properties of the only wurtzite structure GaN have been reported over the last years 27,28 . Although the cubic GaN has been reported, 29 the structural, electronic and optical properties of the bulk cubic GaN have not well understood.…”

Section: Introductionmentioning

confidence: 99%

Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations

Pan¹

2021

Intl J of Energy Research

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Gallium nitride (GaN) is a promising semiconductor material for the application of the high power electronic, optoelectronic, laser diodes, etc. The previous works have been focused on the electronic and optical properties of the monolayer GaN. However, the structural, electronic and optical properties of the bulk GaN are unclear. In particular, the role of N-vacancy on the electronic and optical properties of the bulk GaN is unknown. In this work, we apply first-principles calculations to study the influence of N-vacancy on the structural, electronic and optical properties of the bulk GaN. Three bulk GaN: hexagonal (P63/mc), cubic (F-43m) and cubic (Fm-3m) are considered. The result shows that the N-vacancy is thermodynamic stability in bulk GaN. The thermodynamic stability of the GaN with the N-vacancy is demonstrated by the change of Ga N bond. Three GaN show the semiconductor feature because of the role of N-2p state. The calculated band gap of GaN with the P63mc, F-43m and Fm-3m is 1.651, 1.489 and 0.450 eV. However, the N-vacancy enhances the electronic jump of GaN because the N-vacancy induces the move of the position of Fermi level to the region of the conduction band. The metallic behavior of GaN with the N-vacancy is demonstrated by the dielectric function diagram. In particular, the N-vacancy gives rise to the visible light region optical adsorption compared to the corresponding bulk GaN.

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Controllable metal nanodots array fabricatied by SDS-assisted nanosphere lithography and its application for nanowires growth

Bai,

Zhao,

et al. 2024

Appl. Phys. A

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Self-assembly and growth mechanism of N-polar knotted GaN nanowires on c-plane sapphire substrate by Au-assisted chemical vapor deposition

Cited by 7 publications

References 68 publications

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Influence of N‐vacancy on the electronic and optical properties of bulk GaN from first‐principles investigations

Controllable metal nanodots array fabricatied by SDS-assisted nanosphere lithography and its application for nanowires growth

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