Self-compensating piezoresistive pressure sensor

Dziuban, Jan; Górecka-Drzazga, Anna; Lipowicz, U.; Indyka, W.; Wasowski, Jerzy

doi:10.1016/0924-4247(94)80014-6

Cited by 11 publications

(3 citation statements)

References 2 publications

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“…Figure 1 shows the pressure sensor output, and figure 2 shows the combined hysteresis and linearity. The presented values for sensitivity, linearity and hysteresis are adequate for biomedical applications [1,2,7]. The zero offset is in accordance with previously reported values [8] and it can be compensated with an external resistive circuit [9].…”

Section: Resultssupporting

confidence: 88%

A micromachined pressure sensor for biomedical applications

Bistue

Elizalde

Garcı́a-Alonso

et al. 1997

J. Micromech. Microeng.

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A silicon pressure microsensor fabrication process is reported. The microsensor has been designed as a low-cost disposable device for invasive blood pressure measurements. Results obtained from static, dynamic and leakage pressure tests are presented. A sensitivity of has been measured. The combined linearity and hysteresis is less than 1.5% FSO. The dynamic response is fast enough to reproduce the blood pressure waveform of the human heart. Results based on a material biocompatibility study are also included.

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Section: Resultssupporting

confidence: 88%

A micromachined pressure sensor for biomedical applications

Bistue

Elizalde

Garcı́a-Alonso

et al. 1997

J. Micromech. Microeng.

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“…Much work has been done to fabricate pressure sensors monolithically integrated with its necessary on-chip electronic circuitry for signal processing, temperature compensation and parameter calibration, and good results have been presented (Jakob, 1993;J. Dziuban et al, 1994).…”

Section: Introductionmentioning

confidence: 99%

An architecture for a 12 bits, low power integrated CMOS pressure sensor with thermal compensation

Chavez

Olmos

Nogueira

et al. 1997

VLSI: Integrated Systems on Silicon

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The design of a CMOS piezoresistive pressure sensor with mixed-signal circuitry to provide a digital output is described. The on-chip sensor is a monolithic silicon etched diaphragm, built via post-processing, with the strain gauge composed of diffused resistors in an active Wheatstone bridge configuration. The amplifier's bridge is chopped for efficient low frequency noise and amplifier offset cancellations. The A-to-D converter is based on a second-order Al: modulator including 6 bits DAC units for sensor offset calibration. The circuit has temperature compensation of both full output scale and offset. Overall system resolution is 12 bits, corresponding to 72dB dynamic range, while the pressure range is 0 to 50kPa. Pulsed mode operation allows for low power dissipation (

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“…3.60). This arrangement of piezoresistors can be applied in sensors with a bossed-type membrane without loss of sensitivity [141,142]. The ''cut'' piezoresistors make the technology of sensors easier, and at the same time ensure their high sensitivity.…”

Section: Application Of Membranesmentioning

confidence: 99%

Deep, Three-Dimensional Silicon Micromachining

Bonding in Microsystem Technology

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Three-dimensional (3-D) silicon structures (also called silicon micromechanical structures, micromechanical constructions or just micromechanical structures) are commonly produced by means of wet deep micromachining of silicon substrates. Structures are truly three-dimensional; they are micromachined ''through'' a substrate.The description of wet deep micromachining, presented in this chapter, begins with determination of the mechanical properties of silicon and characterization of silicon substrates used for fabrication of micromechanical structures and basic features of wet anisotropic etching of silicon (focused on etching in KOH). Next, fabrication procedures of basic silicon microconstructions, and examples of its application in microsystems, are described. * In ref. [9] the method of plastic permanent strain of silicon microstructures is described, as well as the permanent strain of a silicon substrate (heated to 800°C) by means of the method of applying a controlled pressure in such a way that material deformation does not exceed 0.1 mm/min. This means that silicon ''flows'' mechanically at a higher temperature. This phenomenon is of no significance in silicon microsystems, because their working temperature does not exceed a few hundred degrees centigrade. * This weight is maintained during silicon monocrystal fabrication through a narrow (2 mm) silicon seed neck. Tensile stress generated in the neck amounts to over 12 MPa [1]. However, the material does not crack. * Much credit for the discovery of anisotropic properties of crystals should be given to Rene ´-Just Hau ¨y, a canon from the Notre-Dame Cathedral of Paris in about 1802 (Traite `de Crystalographie, 1822). * It has been estimated that flying micro objects covered with such ''skin'' can reach speed of 20M (M -Mach number) in earth's atmosphere. † Grove-Deal effect: a strongly curved silicon surface oxidizes slower than a flat one.

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Self-compensating piezoresistive pressure sensor

Cited by 11 publications

References 2 publications

A micromachined pressure sensor for biomedical applications

A micromachined pressure sensor for biomedical applications

An architecture for a 12 bits, low power integrated CMOS pressure sensor with thermal compensation

Deep, Three-Dimensional Silicon Micromachining

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