Self-Compensation of the Phosphorus Acceptor in ZnSe

Abstract

ZnSe epilayers doped with plasma-activated phosphorus have been investigated by means of optical and electrical measurements. It is found that P Se forms a shallow acceptor with binding energy of 85 meV which is identified in the optical emission spectra. In these samples we also observe an energy level near 90 meV from the valence band using deep level transient spectroscopy. We assign it to the P Se acceptor identified in photoluminescence. Also, deeper levels were observed with binding energies up to 450 meV. Some of them are metastable and give rise to persistent photoconductivity. We discuss their relevance taking into account that all samples investigated in the study were highly resistive.

ZnSe nanoribbon/Si nanowire p–n heterojunction arrays and their photovoltaic application with graphene transparent electrodes

“…3b with this formula, an activation energy of E a ¼ 97 meV was obtained, which is close to that reported for P-doped ZnSe films (92 meV) and could be assigned to the acceptor energy level for simple substitutional P Se acceptors. 34 The above results unambiguously demonstrate that efficient p-type doping has been achieved in the ZnSe nanostructures by using P as the dopant. This success is important for the optoelectronic applications of the ZnSe nanostructures.…”