Self-consistent Coulomb effects and charge distribution of quantum dot arrays

Wetzler, R.; Wacker, Andreas; Schöll, Eckehard

doi:10.1103/physrevb.68.045323

Cited by 12 publications

(7 citation statements)

References 19 publications

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“…Our model is similar to the one studied by Kießlich et al [37] and by Wetzler et al [38], but their systems were relatively small or disordered. Their focus was on small arrays of quantum dots in semiconductor heterostructures, while we are interested in the statistical physics of clean systems in the thermodynamic limit.…”

Section: Introductionsupporting

confidence: 72%

Charge order in an interacting monolayer under transverse bias

Ludwig

Timm

2016

Phys. Rev. B

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A monolayer of molecules or quantum dots sandwiched between electrodes can be driven out of equilibrium by the application of a bias voltage between the electrodes. We study charge ordering, i.e., the spontaneous formation of a charge density wave, and the perpendicular current in such a system within a master-equation approach augmented by mean-field and classical Monte Carlo methods. Our approach is suitable for weak tunneling between the monolayer and the electrodes. For a square lattice with nearest-neighbor Coulomb repulsion, we present a comprehensive study of the zero-temperature phases controlled by the on-site energy, the bias voltage, and the degeneracy of the occupied single-site state. One of the most interesting results is the prediction of a conducting charge-density-wave phase that only occurs at a finite bias voltage. We also study the universality classes of the phase transitions towards charge-ordered states at zero and nonzero temperatures. While all transitions at $T>0$ and some at $T=0$ belong to the two-dimensional Ising universality class, we also find an absorbing-to-active phase transition in the $\mathbb{Z}_2$ symmetric directed percolation (DP2) class at $T=0$.Comment: 16 pages, 16 figures; minor change

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Section: Introductionsupporting

confidence: 72%

Charge order in an interacting monolayer under transverse bias

Ludwig

Timm

2016

Phys. Rev. B

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“…For ground states of InAs QDs in an GaAs matrix U ≈ 20 meV was determined by capacitance spectroscopy [24] and U should be even higher for an AlAs matrix due to the smaller size of the dots. However, the highly-doped contacts are close to the QD layer (a few nm) so that screening effects will reduce the Coulomb matrix elements [25].…”

Section: Resultsmentioning

confidence: 99%

Coulomb‐mediated electron bunching in tunneling through coupled quantum dots

Kießlich

Schöll

Hohls

et al. 2008

Phys. Status Solidi (c)

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The recent observation of super‐Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack.We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For the induced potential U ind originating from the induced electron density δn 2D (q) in the quantum well layer the Fourier components of the three-dimensional Poisson equation [16] read as…”

Section: B Two-dimensional Electron Gasmentioning

confidence: 99%

“…The depletion of the wetting layer density by an electric field [13] has been shown to reduce the relaxation rates. Similarly, the electron density in the vicinity of the QDs is reduced in a pn diode by the depletion layer within a DLTS experiment [14,15,16]. Electrons which are candidates for a Coulomb scattering process are not located at the QDs anymore, but at some distance.…”

Section: Introductionmentioning

confidence: 99%

Coulomb scattering with remote continuum states in quantum dot devices

Wetzler

Wacker

Schöll

2004

Journal of Applied Physics

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Electron capture and emission by Coulomb scattering in self-assembled quantum dot (QD) devices is studied theoretically. While the dependence of the Coulomb scattering (Auger) rates on the local wetting layer electron density has been a topic of intense research, we put special interest on the remote scattering between QD electrons and continuum electrons originating from a quantum well, doped bulk layers or metal contacts. Numerical effort is made to include all microscopic transitions between the Fermi distributed continuum states. The remote Coulomb scattering is investigated as a function of the electron density, the distance from the QDs and the temperature. Our results are compared with experimental observations, considering lifetime limitations in QD memory structures as well as the electron emission in pn-diodes

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Self-consistent Coulomb effects and charge distribution of quantum dot arrays

Cited by 12 publications

References 19 publications

Charge order in an interacting monolayer under transverse bias

Charge order in an interacting monolayer under transverse bias

Coulomb‐mediated electron bunching in tunneling through coupled quantum dots

Coulomb scattering with remote continuum states in quantum dot devices

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