Self-Consistent Electro-Thermal Approach for Terahertz Frequency Multiplier Design

Pérez-Moreno, Carlos G.; Grajal, Jesús

doi:10.1007/s10762-020-00747-6

Cited by 8 publications

(7 citation statements)

References 24 publications

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“…When compared to other post-verified circuit designs, this approach gives the whole circuit E-T simulated results from the beginning [22][23][24]. The design flow is much more concise and requires fewer iterations when compared to state of the art in [20]. A detailed 225-300 GHz frequency tripler that uses this approach is as follows.…”

Section: Design Methods Flowmentioning

confidence: 99%

“…This model is straightforward and practical, but lacks thermal effects. Therefore, a series of E-T diode models are developed in order to characterize the power drop phenomenon and provide power handling capability expectations for diode thermal management issues [19][20][21][22][23][24]. A self-consistent E-T model with a multi-anode thermal coupling matrix is proposed in [23], which allows for predicting the different anode junction temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…A state of art project with a complete E-T model circuit design for broadband frequency multiplier is presented in [20]. This work built an analytical self-consistent E-T model implemented into commercial circuit design by establishing an integrated thermal management approach.…”

Section: Introductionmentioning

confidence: 99%

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Electro-Thermal Design for Broadband Balanced Terahertz Tripler

Wei

Zhang

Cui

et al. 2022

Preprint

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This paper presents a comprehensive electro-thermal (E-T) design method applied to the circuit design of the multipliers, which intends to improve the design flexibility and simulation reliability of the broadband frequency multiplier.The design method is divided into two steps: a self-consistent electro-thermal model and an external matching circuit. The self-consistent electro-thermal model consists of three parts: the steady-state thermal model, the thermal separation variable model, and the three-dimensional (3-D) electromagnetic (EM) model. The electro-thermal model is suitable for application in hybrid integrated circuit, because the thermal correction is only carried in simulation. There is no additional diode and temperature-controlled equipment cost in thermal parameters extraction. Then, a formula-based impedances network named linear embedding impedances is set as external wideband response instead of single frequency point embedding impedance. This two-step design method enables the nonlinear I-V thermal correction, circuit matching design and their coupling simulation in circuit level. Based on the design approach, a balanced 225–300 GHz frequency tripler with AlN substrate has been designed and manufactured. The output consistency of simulated and measured results reachs up to 82% and the S11 basically better than -10 dB across the wideband of 225-300 GHz.

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Section: Design Methods Flowmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electro-Thermal Design for Broadband Balanced Terahertz Tripler

Wei

Zhang

Cui

et al. 2022

Preprint

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“…On the other hand, the estimated real‐time temperature at each anode should provide the variations in diode parameters including saturation current ( I s ), series impedance ( R s ) and ideality factor ( n ). Generally, the existing electro‐thermal model only provide the temperature properties of saturation current ( I s ), series impedance ( R s ) and ideality factor ( n ) based on some approximate temperature‐dependent factors and the original values of these parameters at the ambient temperature [ 6–14 ] . Pérez‐Moreno [ 14 ] utilized the original values including I s ( T nom ) and R s ( T nom ) obtained from physics‐based numerical simulations, which needs to know the details of the anode and requires high computational ability due to the microscopic insight into the device physics.…”

Section: Architecture and Designmentioning

confidence: 99%

“…Generally, the existing electro‐thermal model only provide the temperature properties of saturation current ( I s ), series impedance ( R s ) and ideality factor ( n ) based on some approximate temperature‐dependent factors and the original values of these parameters at the ambient temperature [ 6–14 ] . Pérez‐Moreno [ 14 ] utilized the original values including I s ( T nom ) and R s ( T nom ) obtained from physics‐based numerical simulations, which needs to know the details of the anode and requires high computational ability due to the microscopic insight into the device physics. Moreover, none of these methods consider the errors in parameter extraction results introduced by the temperature distribution among the n ‐number anodes at high bias current regime due to the self‐heating phenomenon and asymmetrical thermal coupling.…”

Section: Architecture and Designmentioning

confidence: 99%

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

Tian

Huang

et al. 2022

Chinese J of Electronics

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The research on high power 170 GHz frequency doubler based on the GaAs Schottky diodes is proposed in this paper. This basic doubler cell is developed with a 50-μm-thick, 600-μm-wide, and 2-mm-long AlN substrate with high thermal conductivity to reduce the thermal effect. Besides, power combined frequency doubler has been fabricated to improve the power capacity by a factor of two. Great agreement has been achieved between the simulated results based on electrothermal model and measured performances. At room temperature, the 3 dB bandwidth of the single doubler based on GaAs Schottky diodes is 11.8% over the frequency range from 160 to 180 GHz with pumping power of 150 to 330 mW. And the peak efficiency of the doubler is measured to be 33.1%, while the maximum output power is 101.7 mW at 174.08 GHz. As for power combined circuit, the best efficiency is 30.1% with a related output power of 204.6 mW. The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

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A 225–300 GHz broadband frequency tripler using accurate series resistance model

Wei,

Zhang,

Cha

et al. 2024

Micro & Optical Tech Letters

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This paper proposed an accurate series resistance model tailored for Schottky diode‐based terahertz multipliers. Compared to the conventional electrothermal model (E‐T model) only considering thermal effects, this model comprehensively accounts for both thermal and frequency effects of the series resistor components, including the temperature‐dependent epilayer resistance (Repi) and the temperature‐frequency‐dependent spreading resistance (Rspreading). The evaluation of thermal effects relies on steady‐state thermal simulation and the corresponding electrothermal model. Notably, the frequency‐dependent spreading resistance part is derived from the fitting conductivity of doped buffer layers and extracted by auxiliary three‐dimensional electromagnetic simulations. Based on this model, a balanced 225–300 GHz frequency tripler with AlN substrate has been designed and manufactured. By introducing this model, a significant improvement in the consistency between simulated and measured results has been achieved compared to the single E‐T model, regardless of whether the input power is low (80 mW) or high (160 mW).

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Self-Consistent Electro-Thermal Approach for Terahertz Frequency Multiplier Design

Cited by 8 publications

References 24 publications

Electro-Thermal Design for Broadband Balanced Terahertz Tripler

Electro-Thermal Design for Broadband Balanced Terahertz Tripler

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

A 225–300 GHz broadband frequency tripler using accurate series resistance model

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