Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions

To investigate the reliability of ESD protection in smart power integrated circuits the ESD experiments are performed and degradation is analyzed by low frequency noise measurements. Combining the noise results with further failure analysis analytical methods we have examined a location and the nature of defects. Special attention was dedicated to analysis of latent defects. The possibility to apply noise as reliability indicator for repetitive testing and for use in high volume production are also discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements

Hadzi-Vukovic

Jevtic

Glavanovics

et al. 2008

Physica Status Solidi (a)

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Anomalous I–V and pulse noise in reverse biased p–n junctions

Jevtic

1998

Microelectronics Reliability

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Two-polarity pulse noise in reverse biased degraded p–n junctions

Jevtic¹

1998

Microelectronics Reliability

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Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions

Cited by 8 publications

References 7 publications

The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements

The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements

Anomalous I–V and pulse noise in reverse biased p–n junctions

Two-polarity pulse noise in reverse biased degraded p–n junctions

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