Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

Saidi, Hosni; Msahli, Melek; Dhafer, Rania Ben; Ridene, Saïd

doi:10.1016/j.spmi.2017.09.020

Cited by 15 publications

(3 citation statements)

References 31 publications

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“…where E A = 0.06 eV is the activation energy taken from [18] and k B is Boltzmann's constant. The gain is approximated as a linear function of carrier density set relative to the carrier density at transparency N o , given by…”

Section: Time-domain Transfer Matrix Methodsmentioning

confidence: 99%

Tuning behaviour of slotted vernier widely tunable lasers

et al. 2019

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A detailed thermo-optic model combining the 1D transfer matrix method and a 3D finite element method is developed and used to simulate a widely tunable vernier laser based on surface etched slots. The model is used to investigate the experimentally observed tuning patterns. At low injection currents, carrier tuning dominates, while at high currents, thermal tuning is the dominant mechanism. These lasers are very simple to fabricate and have a wide tuning over 50 nm, but SMSR and linewidth performance is not yet optimised. Simulations give an insight into the observed tuning efficiency and linewidth performance of the lasers, with high carrier densities in the grating regions being identified as a key area, which is presently limiting these parameters.

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Section: Time-domain Transfer Matrix Methodsmentioning

confidence: 99%

Tuning behaviour of slotted vernier widely tunable lasers

et al. 2019

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“…Anisotropy, piezoelectricity, and crystalline structure have all been examined as influences on phonon acoustics oscillations in GaAs/AlAs superlattices including GaAs QW slabs [23,24]. They described a generic numerical approach for determining photoelastic factors in (hkl)-orientated cubic crystal structures [25]. PZ fild-focused energy band structural properties and optical gain characteristic of (111)-oriented AlGaInAs/InP multi-QW structure for NIR laser application domains are demonstrated and examined using a self-optimizing genetic algorithm technique [26], which probably holds a lot of promise to select as an alternate solution active area for highly efficient NIR lasers.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Mijwil

2022

AJET

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The optoelectronic achievement of a lattice matching InGaAs/InP lateral cavity surface radiating LASER in crystal orientations (100), (110), (111), (113), and (131) is computationally simulated utilising MATLAB by attempting to solve a k.p Hamiltonian of eight-band utilising only a finite difference strategy with spin-orbit linkage. To shift wave-vector k as well as Hamiltonian from traditional (100) plane orientation, tensor plane revolution equations are used. It is demonstrated that optical emission spectrum and crystal plane alignments have a significant correlation. At a carriers injection density of 2.50 x 1018 per cm3, the maximum and minimum gains are measured in the (111) as well as (100) orientations, respectively, with optimum emission wavelengths of 1770.00nm and 1680.00nm. This research will serve as a catalyst for the development of ultra-fast optoelectronic devices with improved performance thanks to the use of non-100 orientation epitaxial layers.

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“…Although the growth in the (001) direction leads to good crystal quality for the QWs, the optical gain is reduced due to the small energy splitting between the valence bands [14]. In addition, recent advances in growth technologies of low-dimensional hetero-structures, such as MBE (Molecular Beam Epitaxial) and MOCVD (Metal-Organic Compounds Chemical Vapor Deposition), have made it possible for nonconventional orientations of quantum well structures, and thus the optical and electrical properties of quantum well lasers grown in arbitrary crystal orientations have attracted more attention [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

Zhao²,

Gao³

2022

Crystals

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High-speed VCSELs are widely used for high-capacity, short-range data communication links. Here, we numerically investigate the optical and electronic properties of a crystal orientation-dependent 1.06% compression InGaAs-AlGaAs laser emitting around 850 nm. The reduction of the density of states is observed in the largest energy range for the quantum well in the (110) orientation compared with the conventional (001) orientation. The calculated transparency carrier density decreases from 2.74 × 1018 cm−3 to 1.88 × 1018 cm−3 with the gain coefficient rising from 4969.4 cm−1 to 5427.2 cm−1 in (110) orientation. The 3 dB bandwidth of 31.25 GHz is realized in the (110) orientation, which can support 60 Gbps (NRZ) applications.

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Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

Cited by 15 publications

References 31 publications

Tuning behaviour of slotted vernier widely tunable lasers

Tuning behaviour of slotted vernier widely tunable lasers

Optical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations

Numerical Investigation of Optical and Photoelectric Properties for 850 nm VCSELs with Arbitrary Crystal Orientation

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