Self-Consistent Schrödinger-Poisson Study of Electronic Properties of GaAs Quantum Well Wires with Various Cross-Sectional Shapes

Gil-Corrales, John A.; Vinasco, J.A.; Radu, A.; Restrepo, R.L.; Morales, A. L.; Duque, C.A.

doi:10.3390/nano11051219

Cited by 10 publications

(4 citation statements)

References 53 publications

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“…The one-dimensional (1D) model is achieved by the known self-consistent Schrödinger–Poisson equation solving scheme, 35 – 37 which is depicted on the z-axis in Fig. 1(a).…”

Section: Theoretical Modelmentioning

confidence: 99%

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

Pang,

Cao,

Zheng

et al. 2023

J. Nanophoton.

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.Surface acoustic waves (SAWs) with a strong enough piezoelectric field can capture and transport electrons and holes. The presence of SAWs and their photo-generated carriers’ transport properties in the GaAs/AlGaAs quantum well (QW) is a potential scheme to achieve single photon sources and single photon detectors. We numerically solve the system of coupled Schrödinger and Poisson equations and the carriers’ radiative lifetime. A finite difference method of two-dimensional was developed as a conventional approach to the theoretical understanding of the presence in the QW through Python programs. The features of carriers’ radiative lifetime are discussed as functions of the SAW wavelengths and SAW amplitudes. The spatial separation and radiative lifetime extension of the electrons and holes in the SAW-driven QW was explained by the method.

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“…The one-dimensional (1D) model is achieved by the known self-consistent Schrödinger–Poisson equation solving scheme, 35 – 37 which is depicted on the z-axis in Fig. 1(a).…”

Section: Theoretical Modelmentioning

confidence: 99%

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

Pang,

Cao,

Zheng

et al. 2023

J. Nanophoton.

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show abstract

“…This is the prototypical singleparticle Hartree mean-field approximation. For many applications an approach based on Schrödinger-Poisson is sufficient, e.g., [3,[114][115][116][117][118].…”

Section: Wigner Functionmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

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“…The x-dependent differential equation associated with the Equation (3) when the wave function represented by Equation (4) has been considered solved through the FEM with the COMSOL-Multiphysics licensed software (5.4, COMSOL AB, Stockholm, Sweden) [44][45][46] by implementing the semiconductor module ("Semiconductor Module User's Guide" COMSOL Multiphysics ® ) [47][48][49][50]. In this way, the values of the probability amplitudes are found in any region of the system.…”

Section: Theoretical Modelmentioning

confidence: 99%

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Gil-Corrales

Morales

Yücel

et al. 2022

IJMS

Self Cite

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In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.

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Self-Consistent Schrödinger-Poisson Study of Electronic Properties of GaAs Quantum Well Wires with Various Cross-Sectional Shapes

Cited by 10 publications

References 53 publications

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

Numerical analysis of surface acoustic wave driven carriers transport in GaAs/AlGaAs quantum well

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

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