Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Hashemi, Fatemeh; Prasittichai, Chaiya; Bent, Stacey F.

doi:10.1021/acsnano.5b03125

Cited by 129 publications

(95 citation statements)

References 39 publications

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“…Previous studies have achieved area selective deposition of thin films using methods such as relying on inherent selectivity differences between different surface materials, choosing precursors that enhance or delay the growth on one surface versus another, using an unreactive polymer film as a blocking layer in the regions where ALD is not desired or precursor infiltration in polymers . However, more commonly, the surface of the substrate is chemically modified with self‐assembled monolayers (SAMs) . These organic monolayer films form spontaneously on solid surfaces and are important in the fabrication of micro‐ and nanostructures.…”

Section: Introductionmentioning

confidence: 99%

“…Toward AS‐ALD, different studies have shown promising results both in 2D and 3D by using SAMs to passivate the surface in the regions where ALD is not desired. For example, octadecylphosphonic acid (ODPA) has been used to direct area selective ALD of ZnO and Al 2 O 3 on metal/metal oxide patterns . Selective deposition of Pt, HfO 2 , and ZrO 2 has been demonstrated on SiH/SiO 2 patterns by protecting the surfaces using alkylsilane and alkyl monolayers …”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the selectivity achieved using SAMs as the blocking layer may be limited to very thin films. With some exceptions, most previous studies of AS‐ALD using SAMs have achieved deposited thicknesses on the order of only a few nanometers . The limit arises from a breakdown in the ability of the SAM to effectively block film growth after a certain number of ALD cycles.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Hashemi¹,

Bent

2016

Adv Materials Inter

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Next generation 3D electronic devices will require novel processing methods. Area selective atomic layer deposition (ALD) of robust films has the opportunity to play an important role in significantly reducing complexities associated with current top‐down fabrication processes of patterned structures. An all‐vapor process is demonstrated for depositing and regenerating thiol self‐assembled monolayers (SAMs) on copper between ALD cycles. It is shown that by redosing SAM precursors, the SAM quality can be restored after it begins to degrade. It is also shown that this approach is effective in improving the blocking properties of the SAMs against ZnO ALD. This process allows selective deposition of dielectric films on dielectric regions of patterned Cu/SiO2 substrates more than three times thicker than approaches that do not regenerate the SAM. In addition, this all‐vapor strategy provides the ability to integrate the selective deposition process into the ALD reactor, reduces artifacts associated with depositing the SAMs on porous or 3D structures, and decreases the required deposition time for the passivation layer, opening up the possibility for new applications in next generation electronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Hashemi¹,

Bent

2016

Adv Materials Inter

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“…For example, octadecylphosphonic acid has been employed as an area selective resist layer to protect Cu for the effective deposition of ZnO using ALD or polyurea with MLD . The process was subsequently adapted with a selective etching step that allows for a “self‐correcting” strategy . Other ASD studies report using stable polymers such as poly(methyl methacrylate), poly(vinyl pyrrolidone), polyimide, and poly(methacrylamide) as mask layers to prevent ALD deposition.…”

Section: Introductionmentioning

confidence: 99%

Area Selective Polymer Brush Deposition

Cummins

Shaw

Morris

2017

Macromol. Rapid Commun.

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Polymer brush films with chemical functionality to attach to site specific substrate areas are introduced for area selective deposition (ASD) application. It is demonstrated that polymer brushes with chemically defined end sites can be selectively bound to copper-specific regions of patterned copper/silica (Cu/SiO ) substrates. The process described overcomes various limitations of currently used technology including cost, complexity, and throughput, with potential implications for future electronic devices and nanomanufacturing. A comparative study of amine-terminated polystyrene and amine-terminated poly-2-vinyl pyridine polymer brushes (i.e., PS-NH and P2VP-NH ) with similar molecular weights display contrasting behavior on patterned Cu/SiO line features. Further, a thiol terminated poly-2-vinyl pyridine polymer brush (i.e., P2VP-SH) is investigated as a direct spin-on process to fabricate a metal oxide layer atop Cu areas only. The results presented here detail a novel methodology and open a new exciting process for ASD practices that can facilitate the precise deposition of dense metal, semiconductor, or dielectric films. We also discuss the applicability of polymer brushes to ASD uses going forward.

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“…[3][4][5][6][7] Ideal ALD processes are based on self-limiting surface reactions in which the film nucleation critically relies on chemical interactions between gaseous precursor molecules and the solid substrate surface, providing an attractive opportunity for performing selective deposition via chemical surface modifications. 8 The rapidly progressing AS-ALD literature concentrates entirely on oxides and metals either via area-deactivated, [9][10][11][12][13][14][15][16] area-activated, [17][18][19][20] or inherent surface selectivity 21,22 approaches. Selective deposition recipes for nitride materials are however still missing, mainly due to the need for nitrogen plasma coreactants, which enable the nitrogen incorporation at reduced self-limiting growth temperatures.…”

Section: Introductionmentioning

confidence: 99%

Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides

Deminskyi

Haider

Kovalska

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Plasma-assisted atomic layer deposition (PA-ALD) is a promising method for low-temperature growth of III-nitride materials. However, selective film deposition using PA-ALD is challenging mainly due to the plasma-incompatibility of conventional deactivation/blocking layers including self-assembled monolayers and polymers. The main motivation behind this work is to explore alternative plasmaresistant blocking layer materials. Toward this goal, single/multilayered graphene (SLG/MLG) sheets were investigated as potential growth-blocking layers for III-nitride grown via PA-ALD. Prior to PA-ALD growth experiments, partially graphene-covered Si(100) samples were exposed to N 2 /H 2 and N 2only plasma cycles to evaluate the plasma resistance of SLG and MLG. While SLG degraded fairly quickly showing signs of completely etched areas and rough surface morphology, MLG surface displayed certain degree of plasma-resistance. Based on this result, III-nitride PA-ALD experiments were carried out on MLG-patterned Si(100) samples. Crystalline III-nitride film deposition was observed on both Si(100) and graphene surfaces, confirming the rather ineffective nucleation blocking property of graphene surface against PA-ALD process. However, as graphene layers feature relatively weak van der Waals bonds at the substrate/graphene interface as well as between the multilayer graphene interfaces, conventional lift-off process was sufficient to remove the deposited excessive nitride films. InN and AlN-coated samples were ultrasonicated, and blocked/unblocked surfaces were characterized using scanning electron microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometer. While $50 nm thick films were measured in the open Si(100) areas, graphene-coated sample portions exhibited limited material growth in the range of 5-15 nm. Although not completely, the MLG surface has considerably blocked the PA-ALD growth process resulting in a usable thickness difference, enabling growth selectivity with postgrowth etch process. An Ar-based physical dry etching recipe was utilized to completely etch the unwanted nitride films from graphene coated area, while about 30 and 40 nm thick InN and AlN films remained on the nonblocked parts of the samples, respectively. As a result, selective deposition of PA-ALD grown AlN and InN has been achieved via graphene-assisted lift-off technique along with subsequent dry-etch process, achieving a maximum growth selectivity of $40 nm. With further process recipe optimization and integrating with a suitable patterning technique, the demonstrated graphene-assisted lift-off technique might offer an alternative feasible pathway toward area-selective deposition of III-nitrides and other plasma-necessitating materials.

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Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Cited by 129 publications

References 39 publications

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Area Selective Polymer Brush Deposition

Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides

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