2005
DOI: 10.1007/s11669-005-0049-9
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Self-diffusion and impurity diffusion in silicon dioxide

Abstract: We present experimental and simulation results of silicon (Si) self-diffusion and boron (B) diffusion in silicon dioxide (SiO 2 ), and examine the effect of nitrogen (N) on diffusion in SiO 2 . To elucidate the point defect that mainly governs the diffusion in SiO 2 , the diffusion of implanted 30 Si in thermally grown 28 SiO 2 is investigated. The experimental results show that Si self-diffusivity increases with decreasing distance between the 30 Si and Si-SiO 2 interface. We propose a model in which SiO mole… Show more

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Cited by 1 publication
(2 citation statements)
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“…GeO desorption from GeO 2 surface (on Ge substrate) has been shown using thermal desorption spectroscopy (TDS) by Kita et al, since ALD process precludes TDS experiments, the results of Kita et al are used for the proposed mechanism. This process is Ge selective due to the difference in activation energy for GeO desorption and diffusion and the propensity of SiO x to form a silicate instead of desorbing from gate oxides 42,[47][48] . Preferentially SiO x formation because of difference in oxidation kinetics of Si versus Ge might also play a role.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…GeO desorption from GeO 2 surface (on Ge substrate) has been shown using thermal desorption spectroscopy (TDS) by Kita et al, since ALD process precludes TDS experiments, the results of Kita et al are used for the proposed mechanism. This process is Ge selective due to the difference in activation energy for GeO desorption and diffusion and the propensity of SiO x to form a silicate instead of desorbing from gate oxides 42,[47][48] . Preferentially SiO x formation because of difference in oxidation kinetics of Si versus Ge might also play a role.…”
Section: Discussionmentioning
confidence: 99%
“…Studies on oxygen vacancy formation and diffusion in HfO 2 suggest that Ge diffusion would be oxygen vacancy dependent, but a DFT study is needed to understand the true mechanism. , GeO desorption from a GeO 2 surface (on a Ge substrate) has been shown using thermal desorption spectroscopy (TDS) by Kita et al; since an ALD process precludes TDS experiments, the results of Kita et al are for the proposed mechanism. This process is Ge selective due to the difference in activation energy for GeO desorption and diffusion and the propensity of SiO x to form a silicate instead of desorb from gate oxides. ,, Preferential SiO x formation because of the difference in oxidation kinetics of Si versus Ge might also play a role. However, ozone is very active oxidant and each dosing introduces excess of it which is enough to oxidize Ge along with Si on SiGe.…”
Section: Discussionmentioning
confidence: 99%