Self-encapsulated DC MEMS switch using recessed cantilever beam and anodic bonding between silicon and glass

Behera, Bhagaban; Dhanekar, Saakshi; Singh, Gurnam; Chandra, Sudhir

doi:10.1007/s00542-020-04993-5

Cited by 2 publications

(1 citation statement)

References 21 publications

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“…The elements in bonding layer have been identified by the EDS analysis represented in Figure 8. Different elements including C, O, F, S, and Al are clearly identified in the bonding layers, showing that the process of anodic bonding has accompanied by the directional migration of ions driven by a certain temperature and electric fields 45–47 . It can be seen from the Figure 8b that the elements are less distributed in the intermediate bonding layer, which strongly supports our hypothesis about the ineffective bonding of CPEC2 and Al by traditional anodic bonding.…”

Section: Resultssupporting

confidence: 82%

Flexible anodic bonding for the bonding between elastomer and metal

Zhao¹,

Liu

et al. 2022

J of Applied Polymer Sci

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Considering the inadaptability of traditional anodic bonding to polymer materials, the flexible anodic bonding process is developed. The bonding characteristics of the dynamic intelligent electric fields with the low-temperature plasma surface treatment to polymer and ultrasonic-assisted preconnection before bonding are very suitable for the anodic bonding of polymer elastomer to aluminum (Al) sheet. A series of composite polyurethane elastomer cathode materials (CPECs) with good bonding properties are prepared and characterized. The highest ionic conductivity of CPECs can reach to 2.7 Â 10 À3 S/cm (CPEC2) at 75 C. After bonded, it is determined that a uniform and dense intermediate bonding layer showed by SEM is formed between CPECs and Al. In addition, different elements including C, O, F, S, and Al are clearly iden-

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Section: Resultssupporting

confidence: 82%

Flexible anodic bonding for the bonding between elastomer and metal

Zhao¹,

Liu

et al. 2022

J of Applied Polymer Sci

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Machining technologies and structural models of microfluidic devices

Gou,

Meng,

Yan

et al. 2024

Proceedings of the Institution of Mechanical Engineers, Part C:

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In the past decades, microfluidic chips have been one of the hottest research topics in the “lab-on-a-chip” field. However, it is still a challenge for design the perfect microchannels with high functional integration, complex geometry, and high production efficiency. This review paper provides a comprehensive overview of microfluidic structural models and designs, manufacturing techniques, and bonding methods. The effect of three types of microfluidic channel structure models and their configuration parameters on the fluid behaviors of microfluidics was investigated. Surface-to-volume ratio of the flow channel is a critical parameter for determining the mixing and diffusion capabilities of the microfluidic devices (MDs). Thereafter, the main manufacturing techniques for microstructures were discussed, including etching, photolithography, soft lithography, molding, mechanical micro-machining, laser beam micromachining, printing, and 3D printing. We performed a statistical analysis to discuss the relative advantages and disadvantages of these manufacturing methods. In addition, the current bonding methods for MDs were also summarized, including thermal bonding, solution adhesive bonding, dry adhesive bonding, plasma bonding, and anodic bonding. a comparison of different bonding methods was presented to provide a reference to select a suitable bonding method for the assembly of microfluidic device. Finally, the tendencies and challenges of microchannel manufacturing were discussed, and the prospects were also provided.

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Self-encapsulated DC MEMS switch using recessed cantilever beam and anodic bonding between silicon and glass

Cited by 2 publications

References 21 publications

Flexible anodic bonding for the bonding between elastomer and metal

Flexible anodic bonding for the bonding between elastomer and metal

Machining technologies and structural models of microfluidic devices

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