Self Focusing SIMS: Probing thin film composition in very confined volumes

Franquet, Alexis; Douhard, Bastien; Melkonyan, Davit; Favia, P.; Conard, Thierry; Vandervorst, Wilfried

doi:10.1016/j.apsusc.2016.01.056

Cited by 25 publications

(16 citation statements)

References 18 publications

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“…The relation between the scattering intensities and the Ge content x is then given by:

\frac{I_{G e - G e}}{I_{S i - G e}} = A \frac{x}{2 true(1 - x true)}

where A is a coefficient that may depend on the experimental conditions, but in general good results are obtained with a value of 1.5. In the case of the 20 nm fins, a Ge content of 74.8% is inferred from the integrated intensities of the different modes in Figure , a value that is in reasonable agreement with Self Focusing Secondary Ion Mass Spectroscopy (72%) and Energy‐Dispersive Spectroscopy (73%) on similar samples (not shown). While the accuracy of the composition measurement may be further improved by calibration on industry standards and data processing optimization, this simple experiment demonstrates the potential of nanofocused Raman spectroscopy for non‐destructive and fast composition measurements on the nanoscale.…”

Section: Applications Of Nanofocused Raman Spectroscopysupporting

confidence: 80%

Advanced Raman Spectroscopy Using Nanofocusing of Light

et al. 2017

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Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction-limited, impeding its application potential in nanostructured devices. Under correct polarization conditions, the Raman response from a periodic array of fins is dramatically enhanced inside the semiconductor material, re-enabling fast and non-destructive optical characterization of deep-subwavelength semiconductor patterns. In this paper, it is shown that the effect is not limited to the material system where it was first observed, and results of nanofocused Raman spectroscopy in a variety of semiconductor materials are presented. The authors illustrate and discuss how the universality of the enhancement creates a unique potential for non-invasive and rapid stress and composition measurements at the nanoscale.

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“…The relation between the scattering intensities and the Ge content x is then given by:

\frac{I_{G e - G e}}{I_{S i - G e}} = A \frac{x}{2 true(1 - x true)}

Section: Applications Of Nanofocused Raman Spectroscopysupporting

confidence: 80%

Advanced Raman Spectroscopy Using Nanofocusing of Light

et al. 2017

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“…Further improvement is still required to make this technique reliable for analyzing 3D nanostructures. As an intermediate solution 1.5D SIMS and self‐focusing SIMS are used to extract composition and doping information from 3D confined structures, with feature sizes even less than 100 nm, without pushing the beam dimension to the nm‐scale . As these techniques are based on averaging over a large area of a sample, containing multiple devices, a good statistic over a large number of structures can be obtained in a single measurement.…”

Section: Introductionmentioning

confidence: 99%

Development and Synchrotron‐Based Characterization of Al and Cr Nanostructures as Potential Calibration Samples for 3D Analytical Techniques

Dialameh

Lupi

Hönicke

et al. 2017

Physica Status Solidi (a)

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The continuous and aggressive scaling in semiconductor technology results in the integration of increasingly complex 3D architectures and new materials. The realization of these downscaled 3D structures requires also further improvement in 3D characterization techniques. In this work, a potential route to improve the accuracy and reliability of the quantitative analysis of 3D nano-devices is investigated. 3D organic and inorganic reference nanostructures with dimensions and structural ordering resembling those utilized in industrial applications are fabricated and characterized in detail. The 3D organic nanostructures are fabricated exploiting the selfassembly capability of di-block copolymers. Subsequent deposition of a thin Al film lead to the formation and realization of nanostructured Al. In addition, different inorganic nanostructures are fabricated using electron beam lithography. The various nanostructures are characterized with respect to their dimensions as well as composition using various analytical techniques namely reference-free grazing incidence X-ray fluorescence, grazing incidence small angle X-ray scattering, scanning electron microscopy, and spectroscopic ellipsometry. status solidi physica a Di-Block Copolymers www.pss-a.com

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“…Отметим, что в более поздних работах [5,6] подобный подход использовался для анализа нанообъектов GeSi и A 3 B 5 , сформированных в матрице Si 3 N 4 или SiO 2 методами электронной литографии. Авто-ры [5,6] предложили новое наглядное название этому подходу -Self Focusing SIMS.…”

Section: поступило в редакцию 23 декабря 2016 гunclassified

“…Авто-ры [5,6] предложили новое наглядное название этому подходу -Self Focusing SIMS. Однако, на наш взгляд, название " самофокусировка" не совсем точно, поскольку данный подход не позволяет выделять и анализировать один из нанообъектов, а характеризует свойства массива нанообъектов в целом.…”

Section: поступило в редакцию 23 декабря 2016 гunclassified

“…Представляется, что более точным для обсуждаемого подхода ВИМС является название " селективный". В работе [5] для анализа нанообъектов GeSi в пассивирующей матрице Si 3 N 4 /SiO 2 использовалась калибровка Ge 2 /GeSi, аналогичная нашим работам [2,3]. Нанообъекты A 3 B 5 в матрице SiO 2 [6] представляли собой более про-стую систему, поскольку окружающая матрица SiO 2 не содержит эле-ментов этих объектов.…”

Section: поступило в редакцию 23 декабря 2016 гunclassified

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Селективный анализ элементного состава нанокластеров InGaAs/GaAs методом вторично-ионной масс-спектрометрии

Дроздов¹,

Danil’tsev²,

Дроздов³

et al. 2017

Письма В Журнал Технической Физики

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Развиваются новые возможности метода вторично-ионной масс-спектрометрии для количественного анализа атомного состава нанокластеров InGaAs в матрице GaAs. С использованием тестовых структур InxGa1-xAs получены нелинейные калибровочные зависимости "интенсивность-концентрация" для вторичных ионов In2As и InAs, которые не содержат нормировки на элементы матрицы Ga или As и позволяют селективно анализировать состав нанокластеров. Проведен количественный послойный анализ концентрации индия и определены статистические характеристики массивов нанокластеров в гетероструктурах InGaAs/GaAs. DOI: 10.21883/PJTF.2017.10.44620.16635

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Self Focusing SIMS: Probing thin film composition in very confined volumes

Cited by 25 publications

References 18 publications

Advanced Raman Spectroscopy Using Nanofocusing of Light

Advanced Raman Spectroscopy Using Nanofocusing of Light

Development and Synchrotron‐Based Characterization of Al and Cr Nanostructures as Potential Calibration Samples for 3D Analytical Techniques

Селективный анализ элементного состава нанокластеров InGaAs/GaAs методом вторично-ионной масс-спектрометрии

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