Self formation of Si nanostructured layer at the metal silicide/silicon interface

Effects of hydrogen pressure on hydrogenated amorphous silicon thin films prepared by low‐temperature reactive pulsed laser deposition

“…The absorption peaks of the silicon substrate spectrum, which are common to all samples, correspond to: (1) a Si-Si vibration mode in bulk c-Si at 611 cm -1 [20] (2) a Si-Si vibration mode in the presence of oxygen vacancy in SiO 2 at 669 cm -1 [21] (3) a two-phonon (LO + LA) Si mode at 738 cm -1 [22] (4) a bending Si-O-Si mode at 816 cm -1 [21], and ( 5), (6) a Si-O-Si asymmetric stretching doublet at 1074 and 1200 cm -1 , with the last two Si-O-Si modes involving mainly oxygen displacements [23]. The absorption peaks at (7) 2341 cm -1 and (8) 2360 cm -1 correspond to the P and R branch, respectively, of the asymmetric stretching mode of CO 2 gas, present in the atmosphere when taking the IR transmittance measurements [24].…”

Nanosecond Response Found in Photoexcited Surface Carriers Generated by CoSix Nanoparticles on Si Substrate

“…Therefore, the velocity component of the photoexcited carrier has characteristics similar to those of thermoelectronic emission. When the CoSi 2 Schottky model 3) is applied, it is thought that the electrons in the metallic CoSi x nanoparticles 8) become thermoelectrons once they are photoexcited above the Schottky barrier (<0:7 eV, in ref. 3).…”