Self-forming InAs/GaP quantum dots by direct island growth

Abstract

InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer–Weber) rather than Stranski–Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution. Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV. Device applications exploiting broad optical emission in QDs are discussed.

Critical cluster size of InAs quantum dots formed by Stranski–Krastanow mode

“…In the previous study, the experimental results were analyzed using a model 19 in which island density is defined by the diffusion length of adatoms. [6][7][8][9][10][11][12] Although the concept of the model is correct for the nucleation of S-K islands, at least qualitatively, the conclusions obtained using the model were not satisfactory quantitatively: E diff obtained was an unexpectedly large value, i.e., 4.0 eV. We can expect to obtain a consistent explanation for the same experimental results using Eq.…”

“…The decrease is produced by an increase in the diffusion length of adatoms with T s . [5][6][7][8][9][10][11][12] The activation energy E A determined from the Arrhenius plot was 2.0 eV from the slope of the fitted line ͑Fig. 2͒.…”

First step to Si photonics: synthesis of quantum dot light‐emitters on GaP substrate by MBE

“…1. Both the AFM and RHEED characterizations confirm the two-dimensional growth mode of InAs under 1ML, indicating a Stranski-Krastanow (S-K) growth mode, in contrast with the results obtained by Leon et al [16]. Chang et al [17] revealed that under In-stable condition, partially relaxed InAs QDs with smooth surface and low threading dislocation density can be obtained.…”

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

“…Quantum dots emitting in the red have been extensively studied over the past decade in materials systems including InP/InGaP[6-9], InP/GaP [10,11], InP/AlGaInP [12,13], GaInP/GaP [14], InAs/GaP [15], and AlGaInP/GaP [16]. Of these systems, clear single quantum dots with narrow emission lines exhibiting antibunching have been observed only in the InP/InGaP and InP/AlGaInP systems.…”

“…The close match between the lattice constants of GaP and Si (0.37% at 300K [1]) is promising for monolithic integration with silicon [1][2][3], and the large electronic band gap of GaP allows light emission at visible wavelengths. Single quantum dots (QDs) at visible wavelengths are beneficial for quantum applications since Si avalanche photodiodes (APDs) have maximum quantum efficiency in the red part of spectrum; additionally, emission in this part of the spectrum can be frequency downconverted to telecommunications wavelengths using readily available lasers [4,5].Quantum dots emitting in the red have been extensively studied over the past decade in materials systems including InP/InGaP[6-9], InP/GaP [10,11], InP/AlGaInP [12,13], GaInP/GaP [14], InAs/GaP [15], and AlGaInP/GaP [16]. Of these systems, clear single quantum dots with narrow emission lines exhibiting antibunching have been observed only in the InP/InGaP and InP/AlGaInP systems.…”