2013
DOI: 10.1103/physrevlett.110.126601
|View full text |Cite
|
Sign up to set email alerts
|

Self-Heating, Bistability, and Thermal Switching in Organic Semiconductors

Abstract: We demonstrate electric bistability induced by the positive feedback of self-heating onto the thermally activated conductivity in a two-terminal device based on the organic semiconductor C(60). The central undoped layer with a thickness of 300 nm is embedded between thinner n-doped layers adjacent to the contacts, minimizing injection barriers. The observed current-voltage characteristics follow the general theory for thermistors described by an Arrhenius-like conductivity law. Our findings include hysteresis … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
39
0

Year Published

2014
2014
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 38 publications
(43 citation statements)
references
References 29 publications
4
39
0
Order By: Relevance
“…However, when V CE is higher than 1 V, the current easily reaches a level at which Joule self-heating starts, which is why the source-measuring unit is set to pulse all voltages for currents above 1 mA (>2.2 A cm −2 ). Effects of self-heating in a similar device geometry have been previously investigated1320 and will follow for OPBTs, especially as time-resolved pulsed measurements predict that the self-heating is not completely suppressed at higher power input (cf. Supplementary Information).…”
Section: Resultsmentioning
confidence: 98%
“…However, when V CE is higher than 1 V, the current easily reaches a level at which Joule self-heating starts, which is why the source-measuring unit is set to pulse all voltages for currents above 1 mA (>2.2 A cm −2 ). Effects of self-heating in a similar device geometry have been previously investigated1320 and will follow for OPBTs, especially as time-resolved pulsed measurements predict that the self-heating is not completely suppressed at higher power input (cf. Supplementary Information).…”
Section: Resultsmentioning
confidence: 98%
“…According to Langevin recombination, the charge carrier mobilities of both charge carrier types mediate the possibility for free electrons and free holes to find each other. The temperature dependence can well be approximated by an Arrhenius law, especially for the temperature range investigated in this work . The reason is that charges in the GDOS have to be activated from the equilibrium energy level, where most charge carriers sit at low concentrations, to a transport energy level, where finally the charge transport takes place .…”
Section: Resultsmentioning
confidence: 87%
“…An isothermal measurement of the transistor can only be attained in a pulsed measurement mode preventing the heat up of the device. A more detailed view on the self‐heating also describing the dynamics of heating is given by Fischer et al…”
Section: Overview Over Device Principles and State‐of‐the‐artmentioning
confidence: 99%