2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers) 2021
DOI: 10.1109/transducers50396.2021.9495463
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Self-Heating CMOS Flow Sensor

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Cited by 2 publications
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“…At the heart of sensor products is the CMOS technology using the latest TSRI/UMC 0.18 µm single-poly-six-metal (1P6M) process, which enables us to combine the sensor component with amplifier circuitry on a tiny CMOS silicon chip. The CMOS MEMS technology provides error-free gas flow metering that remains stable over a long period and generates a fast and high-precision sensor signal, recently [93][94][95][96][97]. Figure 2a shows the UMC 0.18 µm CMOS process proceeded with isotropic XeF 2 undercut etching for the MEMS open area; Figure 2b shows the use of shallow-trench-isolation (STI) to protect polysilicon during the etching process.…”
Section: Educational Cmos Foundry Service Provided By Tsrimentioning
confidence: 99%
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“…At the heart of sensor products is the CMOS technology using the latest TSRI/UMC 0.18 µm single-poly-six-metal (1P6M) process, which enables us to combine the sensor component with amplifier circuitry on a tiny CMOS silicon chip. The CMOS MEMS technology provides error-free gas flow metering that remains stable over a long period and generates a fast and high-precision sensor signal, recently [93][94][95][96][97]. Figure 2a shows the UMC 0.18 µm CMOS process proceeded with isotropic XeF 2 undercut etching for the MEMS open area; Figure 2b shows the use of shallow-trench-isolation (STI) to protect polysilicon during the etching process.…”
Section: Educational Cmos Foundry Service Provided By Tsrimentioning
confidence: 99%
“…Figure 5a shows the CMOS standard process, which is composed of four kinds of different thin films including silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum, and polysilicon on the silicon substrate. The arrangements of thin films in the order from bottom to top are silicon substrate, silicon dioxide, multiple metal layers with their inter-layer for bulk micromachining [91,165]; (c) acid etch metals (surface micromachining) [35,37]; (d) deep trench plasma etching the oxides to release the cantilever [130]; (e) acid is used to etch metals and TMAH used to etch the Si substrate [57]; (f) electroplating Ni in the process (c) [90,137]; (g) parylene or gelatin is coated on process (e) [87,88]; (h) anisotropic and isotropic etching with STI protection [96,97,102,166].…”
Section: Post-processes Of Cmos Mems Devicesmentioning
confidence: 99%
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