Self-heating effects in red (665 nm) VCSELs

Knowles, G.; Sweeney, S. J.; Sale, T.E.; Adams, A.R.

doi:10.1049/ip-opt:20010843

Cited by 11 publications

(8 citation statements)

References 8 publications

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“…It can be seen from Fig. 3 that the coupled CM=QW PR lineshape becomes anti-symmetric at 388 K. It can be concluded, therefore, that a VCSEL fabricated from the present wafer would be tuned at approximately 115 C (the ideal continuous wave operating temperature would be slightly less than this, due to the effect of current-induced self-heating [9]). Figure 3 also shows that the centre of the anti-symmetric lineshape at 388 K is located at 760.7 nm.…”

Section: Temperature Dependence Of the Normalincidence Prmentioning

confidence: 74%

High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

Cripps

Hosea

Sweeney

et al. 2005

IEE Proc., Optoelectron.

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The wafer of a 760 nm vertical-cavity surface-emitting laser (VCSEL), designed for oxygen sensing up to high temperatures, is investigated using photomodulated reflectance (PR). By varying the angle of incidence, the VCSEL cavity mode (CM) wavelength is tuned through the positions of two excitonic quantum well (QW) transitions. The PR is also measured over a large temperature range to determine when the QW ground-state transition is tuned with the CM. When tuned, the QW/CM PR lineshape becomes anti-symmetric, as predicted by theory. This occurs at 388 K, where the CM and QW wavelengths coincide at 760.7 nm. It is also observed that when tuned, the CM width measured in the reflectance spectrum is maximised. Temperature dependent device studies are also conducted on a 760 nm edge-emitting laser containing a similar active region as the VCSEL. It is found that up to 250 K the device behaves ideally, with the threshold current being entirely due to radiative recombination. However, as the temperature increases, electron leakage into the indirect X-minima of the barrier and cladding layers becomes increasingly significant. At 300 K, approximately 25% of the threshold current is found to be attributed to electron leakage and this increases to 85% at 388 K. The activation energy for this leakage process is determined to be 255 ^5 meV, indicating that electron escape from the QWs into the X-minima of the barrier and/or cladding layers is chiefly responsible for the device's poor thermal stability. These results suggest that VCSELs containing this active region are likely to suffer significantly from carrier leakage effects.

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Section: Temperature Dependence Of the Normalincidence Prmentioning

confidence: 74%

High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

Cripps

Hosea

Sweeney

et al. 2005

IEE Proc., Optoelectron.

Self Cite

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“…2(a) in the paper of Knowles et al [12]. Besides, the strong gain-cavity alignment effect [15] is taken into consideration. its thermal conductivity has been given by Adachi [29] and its temperature dependence by Amith et al [30].…”

Section: The Modelmentioning

confidence: 99%

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Piskorski

Sarzała

Nakwaski

2008

Opto-Electronics Review

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The possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga0.43In0.57P quantum-well material to the X-valley of the (Al0.67Ga0.33)0.52In0.48P barriers and the band-to-band absorption within the Ga0.52In0.48P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T0 equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-μm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.

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“…[1][2][3] Self-heating is becoming an increasing concern in highfrequency and high-power electronic devices 4 and in optoelectronic devices. 5,6 In these devices, the length-scales are short enough that low-frequency components of the heat-flux deviate seriously from the Fourier law, yet too long for it to be computationally practical to entirely abandon the Fourier law. Despite the fact that the Fourier law is known to dramatically overestimate the heat flux 7 due to ballistic transport (generally by LF modes), it continues to be used in device thermal analysis, occasionally even in cases where it is patently inappropriate to use (e.g., filaments a few nanometers in diameter 8,9 ).…”

Section: Introductionmentioning

confidence: 99%

An enhanced Fourier law derivable from the Boltzmann transport equation and a sample application in determining the mean-free path of nondiffusive phonon modes

Ramu

2014

Journal of Applied Physics

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An enhanced Fourier law that we term the unified nondiffusive-diffusive (UND) phonon transport model is proposed in order to account for the effect of low-frequency phonon modes of long mean-free path that propagate concomitantly to the dominant high-frequency modes. The theory is based on spherical harmonic expansions of the phonon distribution functions, wherein the high-frequency mode distribution function is truncated at the first order in the expansion, while the low-frequency mode distribution function, which is farther out of thermal equilibrium, is truncated at the second order. As an illustrative application, the predictions of the proposed model are compared with data from a recent experiment that utilized the transient gratings method to investigate the deviation of thermal transport in a silicon membrane from the predictions of the Fourier law. The good fit of the experimental effective thermal conductivity (ETC) with the analytical solution derived in this work yields quantitative information about the mean-free path of the dominant low-frequency heat-transfer mode in silicon.

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Self-heating effects in red (665 nm) VCSELs

Cited by 11 publications

References 8 publications

High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

An enhanced Fourier law derivable from the Boltzmann transport equation and a sample application in determining the mean-free path of nondiffusive phonon modes

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