Self-heating induced soft degradation of the Early voltage in SiGe:C HBTs

Xu, Mingwei; Sibaja-Hernandez, A.; Sadovnikov, A.; Decoutere, Stefaan

doi:10.1109/led.2003.817384

Cited by 10 publications

(5 citation statements)

References 6 publications

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“…12 shows the corresponding beta measured for the devices in Fig. 11 at |V BE | of 0.75V, showing clearly that the beta for the SiGe-npn and SiGe-pnp devices are layout independent at this bias condition, while the V A shows a clear offset between the CBEBC layout and the CEB layout, consistent with device footprint differences even though we are at very low current density compared to the region where base push-out effects occur [13], typically at J C > 400 μA/μm 2 , for this technology. First, V A measured at forced V BE condition is sensitive to small temperature variations caused by self-heating [14], [15].…”

Section: Transistor Characterizationmentioning

confidence: 61%

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Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Babcock

Choi

Sadovnikov

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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We present a comprehensive investigation of temperature dependence of breakdown voltage, DC current gain (ȕ), and Early voltage (V A ) for complementary SiGe-npn and SiGe-pnp bipolar transistors fabricated on an advanced CBiCMOS technology on thick-film SOI.Both SiGe-npn and SiGe-pnp transistors show decreasing V A as ambient operating temperature increases from -60ºC to +200ºC for low collector current densities (J C 5.0 μA/μm 2 ) with a near linear inverse temperature (1/T) relationship. We also demonstrate in the region historically defined by weak self-heating interactions that V A maintains minimal sensitivity to operating temperature.

show abstract

Section: Transistor Characterizationmentioning

confidence: 61%

“… 13. shows the average values of Early voltage (V A ) versus J C measured with our automated ET tester for both the SiGe-npn and SiGepnp transistors with a CEB layout, where the average values was calculated based on 3-wafers fully ET mapped at each of the temperatures 30ºC, 60ºC, 85ºC, and 125ºC.…”

mentioning

confidence: 99%

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Babcock

Choi

Sadovnikov

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

View full text Add to dashboard Cite

show abstract

“…Less Germanium composition device exhibits less self heating effect [11]. From previously reported result early voltage of SiGe HBT degrades due to self heating effect [11]. It is observed that degradation of early voltage due to self heating effect as compared to without self heating effect.…”

Section: Fig 3: Gummel Plots Of Conventional Trapezoidal (Ct) Sige Grmentioning

confidence: 74%

“…So more self heating effect observed in ST (20 % Ge) graded device and less self heating effect observed in CT profile (2 to 8 % Ge). Less Germanium composition device exhibits less self heating effect [11]. From previously reported result early voltage of SiGe HBT degrades due to self heating effect [11].…”

Section: Fig 3: Gummel Plots Of Conventional Trapezoidal (Ct) Sige Grmentioning

confidence: 75%

Self-Heating Effects in SiGe Heterojunction Bipolar Transistor with Different Ge Grading Profile

Jena*¹,

Panda²,

Dash³

2019

IJITEE

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A comparative account of self heating effect of four SiGe HBTs with different Ge grading profiles, designated as Hybrid Trapezoidal (HT), Symmetrically Triangular (ST), Linear Increasing (LI), and Conventional Trapezoidal (CT) with maximum Ge contents of 20%, is presented. Based on an experimentally validated model of the Silvaco TCAD tool, the properties of the four HBTs are simulated. It is observed that both self heating and local temperature increase due to higher device power dissipation. The effect of energy balance and non iso thermal energy balance effect is observed in SiGe HBT with different Ge base profile have been studied in terms of DC, AC, and RF performances and compared .

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“…When the transistor reaches a medium current level, ~1.0 µA/ µm 2 , we see that the normal mode and inverse mode V A behavior change more dramatically: V AF (J C ) goes down due to well-known self-heating effect [15][16] while V AR (J E ) goes up. We believe that this difference between normal mode and inverse mode V A is caused by the relatively large collector resistance (R C ) that provides "negative feedback" thus compensating the emitter current increase due to self-heating effects.…”

Section: Device Early Voltage Discussionmentioning

confidence: 99%

Forward and inverse mode Early voltage dependence on current and temperature for advanced SiGe-pnp on SOI

Babcock

Sadovnikov

Choi

et al. 2011

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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We present a comprehensive investigation of Early voltage (VA) versus drive current dependence for SiGe-pnp bipolar transistors fabricated on thick-film SOI, operating in normal (forward) and inverse (reverse) mode bipolar conditions. Thermal resistance effects are separated by comparing HBT devices with different thermal footprints for SiGe-pnp transistors characterized in normal and inverse mode of operation. Results show that the emitter and collector resistances play a significant role in the Early voltage characteristics. TCAD simulations are used to explain the observations, showing agreement to experimental data measured between -60ºC to +200ºC.

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Self-heating induced soft degradation of the Early voltage in SiGe:C HBTs

Cited by 10 publications

References 6 publications

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Self-Heating Effects in SiGe Heterojunction Bipolar Transistor with Different Ge Grading Profile

Forward and inverse mode Early voltage dependence on current and temperature for advanced SiGe-pnp on SOI

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