Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs

Kumar, Nitish; Pali, Shraddha; Gupta, Ankur; Singh, Pushpapraj

doi:10.1109/tdmr.2023.3340032

Cited by 5 publications

(1 citation statement)

References 25 publications

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“…where µ n0 is the without strain mobility, m nl and m nt are the electron longitudinal and transverse masses in the sub-valley, respectively, and F n is the quasi-Fermi level of electrons. Some additional models are also used in simulation, such as hydrodynamic, bandgap narrowing, density gradient, mobility degradation (scattering and high field effects), band-to-band tunneling, and SRH recombination, which are discussed in detail in [9,[23][24][25]. The model calibration results with experimental data of JL-NW GAA FET [12] are verified, as shown in figure 3, which shows well agreement between simulation and experimental data.…”

Section: Computational Physical Modelmentioning

confidence: 69%

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs

Kumar,

Joshi,

Gupta

et al. 2024

Nanotechnology

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In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect transistors (FETs). The piezoresistivity of the sensing device is boosted by narrowing channel conductivity using low gate biasing and reducing physical channel width, resulting in the maximum (~6 times higher) sensitivity observed in the subthreshold regime compared to the ON-state condition. In addition, the sensitivity is extensively increased by ~30.3% near the threshold voltage (VTH) with horizontally multi-NS stacking due to the uniform MS distribution on the multi-NS channels, which can sense slight deflection of pressure on the circular diaphragm. These results show that the tunable sensitivity of junctionless multi-channel devices is superior to the inversion mode, a consequence of the less scattering effect, better thermal stability, and low electronic noise.

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Section: Computational Physical Modelmentioning

confidence: 69%

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs

Kumar,

Joshi,

Gupta

et al. 2024

Nanotechnology

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Carrier Tunnelings on Ultrashort‐Gate Junction‐Less Field‐Effect Transistor Designs

Sugiura

2024

Physica Rapid Research Ltrs

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This study discusses tunneling problems encountered when designing ultrashort‐gate junction‐less field‐effect transistors (FETs). Ultrathin‐body silicon‐on‐insulator (UTB‐SOI) FETs are suitable for nano‐length gate designs owing to the augmented bandgap at channel regions. However, a comprehensive understanding of source‐to‐drain (S/D) and gate‐dielectric (G/D) tunneling is essential to ensure optimal performance and reliability. In this study, numerical simulations of UTB‐SOI FETs are conducted to reveal their effects. First, for S/D tunneling, only a p‐channel FET (PFET) is considered critical, and larger tunneling mass eases this problem. Second, for G/D tunneling, an n‐channel FET (NFET) is considered critical. Therefore, the oxide‐wall UTB‐SOI design is considered for the NFET, enabling a large and small ratios for NFET and PFET. Conversely, the conventional trenched UTB‐SOI is considered suitable for PFET. Moreover, the findings demonstrate that adopting hafnium oxide (HfO) as the oxide material renders good FET characteristics. The optimized FET designs can facilitate the minimum gate length to be 1 nm or shorter, especially for NFETs.

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Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor

Sharma,

Kumar,

Sharma

et al. 2024

Nanotechnology

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In this paper, the phototransistor behavior is investigated in the germanium-on-insulator (GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High responsivity and photosensitivity are attributed in the fully depleted regime within the visible and near-infrared bands. The impact of light is also investigated in detail on the electronic and transfer characteristics such as energy bandgap, carrier distribution, electrostatic potential, electric field, and generation and recombination rates. Further, the channel doping and thickness are tuned to optimize the optical responsivity. The significant tunability of responsivity is observed with increasing channel thickness. The device exhibits fast optical switching performance, which is further enhanced at higher input light power. Overall, at the nanoscale dimension, our proposed phototransistor demonstrates better detectivity with a significantly smaller illumination area. Thus, the GeOI-based JL-NW phototransistors can be used for imaging (visible wavelength range) and bioimaging (near-infrared wavelength range) applications in advanced technology nodes.

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Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs

Cited by 5 publications

References 25 publications

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs

Carrier Tunnelings on Ultrashort‐Gate Junction‐Less Field‐Effect Transistor Designs

Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor

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