Self‐Induced Growth of GaN Nanowires by Plasma‐Assisted Molecular Beam Epitaxy

Consonni, Vincent

doi:10.1002/9781118984321.ch8

Cited by 7 publications

(12 citation statements)

References 98 publications

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“…Instead, the SAG nanowalls on N-AlGaSL-2 have a granular structure with a relatively large void fraction. A similar granularity is evident in the surface topography of the underlying buffer, visible between the Preferential formation of m-plane facets has also been reported for self-assembled GaN NWs [41,42], for Ga-polar SAG GaN nanowires grown by PAMBE [22], and it was observed for the N-polar SAG NWs in this study. Although the patterned apertures on all samples were round, as the NWs grew vertically they also expanded laterally to form m-plane sidewall facets (see Figure 1f).…”

Section: Resultssupporting

confidence: 88%

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

et al. 2018

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Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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Section: Resultssupporting

confidence: 88%

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

et al. 2018

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“…Electrical current of our flexible MSM photoswitch is highly sensitive to UV radiation, which has a large change when exposed to and shielded from the UV radiation. As shown in Figure g, the UV on/off ratio of our flexible MSM photoswitch reaches to the highest value of 4.67 × 10 5 at self-powered condition, which is much larger than that of GaN nanowire-based UV photodetectors using photoconductive, p-i-n, or core–shell structures. , So it demonstrates an excellent photosensitive characteristic without external power supply. Meanwhile, this kind of self-powered UV detection is very safe from the hazard of UV irradiation, and self-sufficient with low cost and easy maintenance for a long-time use.…”

Section: Resultsmentioning

confidence: 84%

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

et al. 2015

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Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a flexible and self-powered GaN membrane-based ultraviolet (UV) photoswitch with high on/off ratio and excellent sensitivity. Even without any power supply, the driving force of UV photogenerated carriers can be well boosted by the combination of both built-in electric field and piezoelectric polarization field. The asymmetric metal-semiconductor-metal structure has been elaborately utilized to enhance the carrier separation and transport for highly sensitive UV photoresponse. Its UV on/off ratio and detection sensitivity reach to 4.67 × 10(5) and 1.78 × 10(12) cm·Hz(0.5) W(1-), respectively. Due to its excellent mechanical flexibility, the piezoelectric polarization field in GaN membrane can be easily tuned/controlled based on piezo-phototronic effect. Under 1% strain, a stronger and broader depletion region can be obtained to further enhance UV on/off ratio up to 154%. As a result, our research can not only provide a deep understanding of local electric field effects on self-powered optoelectronic detection, but also promote the development of self-powered flexible optoelectronic devices and integrated systems.

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“…The wide range of unique properties of semiconductor GaN nanowires (NWs), along with various techniques of NW's growth, makes them promising candidates for nano-sized optoelectronics [1]. In recent years, a great deal of effort has been devoted to explore their optical, electrical, and structural properties.…”

Section: Introductionmentioning

confidence: 99%

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

et al. 2015

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In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays exponentially from the NW/substrate interface. Theoretical modeling of X-ray scattering from NWs with different deformation profiles are carried out. We show that the shape of the (002) 2θ/ω X-ray diffraction profile (XDP) is defined by initial deformation at the NW's bottom and its relaxation depth given by the decay depth of the exponential deformation profile. Also, we demonstrate that macro-deformation leads to XDP shift, whereas micro-deformations are the cause of XDP's asymmetry and its symmetrical broadening. A good correlation between calculated and experimental XDP from self-assembled GaN NWs on Si(111) substrate was achieved by taking into account all parameters of micro- and macro-deformation profiles.

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Self‐Induced Growth of GaN Nanowires by Plasma‐Assisted Molecular Beam Epitaxy

Cited by 7 publications

References 98 publications

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

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