Self-intercalation in Bi2Te3〈Cu〉

Kakhramanov, S. S.

doi:10.1134/s0020168508010032

Cited by 8 publications

(4 citation statements)

References 2 publications

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“…It is interesting to note that Cu atoms are not incorporated by substitution but are intercalated to the space between the quintuple layers [10] when Cu is deposited on the (0 0 0 1) face of Bi 2 Te 3 and annealing at 500 K is followed [11]. The fact that the diffusion of Cu in the Bi 2 Te 3 [0 0 0 1] direction is about nine orders of magnitude slower than that in the (0 0 0 1) plane is responsible for the intercalation [11]. When III-V compounds are used as the substrates, the group III elements can also participate in the substitution process [8].…”

Section: Introductionmentioning

confidence: 99%

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Takagaki¹,

Jenichen²,

Jahn³

et al. 2013

Semicond. Sci. Technol.

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We demonstrate the production of In 2 Se 3 films as the growth outcome when Bi 2 Se 3 films are deposited using the hot-wall-epitaxy method on the substrates that contain In. The Bi atoms in Bi 2 Se 3 are substituted with the In atoms supplied from the InAs substrates. Despite a large lattice mismatch, α-In 2 Se 3 layers grow semicoherently on InAs(1 1 1). The substitution is induced on the InP substrates only when the substrate surface is roughened. The phase of the resultant In 2 Se 3 depends on the degree of the surface roughness. When the roughness is not strong, layered structures of α-In 2 Se 3 are produced by semicoherent heteroepitaxy not only on (1 1 1) but also on high-index surfaces. On heavily damaged InP substrates, the layers primarily consist of γ -In 2 Se 3 . We show, in addition, that the In-induced substitution causes the incorporation of Ga atoms in the In-Se compounds on (In,Ga)As surfaces.

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Section: Introductionmentioning

confidence: 99%

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Takagaki¹,

Jenichen²,

Jahn³

et al. 2013

Semicond. Sci. Technol.

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“…As shown by Kakhramanov [19] and Aleskerov and Kakhramanov [20], the intercalation of Ві 2 Те 3 with metal (Cu, Ag, and Ni) atoms leads to accumulation, redistribution, and formation of intercalate nanoinclusions in inter layer spaces along the plane of the (0001) layers; that is, an additional layer of metal nanoinclusions forms in the crystal lattice. A similar result was obtained by Bakhtinov et al [11], who found that intercalation of the layered semiconductor In 2 Se 3 with cobalt in a static magnetic field led to the formation of fcc Co nanostructures in the van der Waals gaps.…”

Section: Resultsmentioning

confidence: 96%

Electrochemical, optical, and magnetic properties of Ni x InSe (0 < x ≤ 1) intercalation compounds

et al. 2014

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“…We do not fi nd indication that such a situation is relevant in Bi 2 Te 3 , in agreement with the report of quite isotropic Seebeck coeffi cient in Bi 2 Te 3 by Fleurial et al [ 32 ] It is known that Cu can be intercalated into the van der Waals gap of Bi 2 Te 3 . [ 33,34 ] Such a modifi cation of material may be utilized to cause anisotropy in Bi 2 Te 3 .…”

Section: Doi: 101002/aelm201400007mentioning

confidence: 99%

Seebeck Effect and Giant Linear Magnetoresistance Affected by Conflicting n‐ and p‐Type Defect‐Induced Doping in Epitaxial Bi₂Te₃ Layers

Takagaki

Papadogianni

Bierwagen

2015

Adv Elect Materials

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further raising the magnetoresistance magnitude, it is urgent to clarify the mechanism of the GLM effect, which remains unsettled so far.In the present work, we investigate the thermoelectric properties at room temperature (RT) and the (electrical) magnetotransport properties at T = 0.3 K in Bi 2 Te 3 layers that were epitaxially grown on the InP substrates by hot wall epitaxy. The hot wall epitaxy method that we employed for growing the Bi 2 Te 3 layers has the advantages of low cost, simplicity, and relatively large growth rates. As is typical for the chalcogenides, the Bi 2 Te 3 layers were unintentionally doped as intrinsic defects-generated free carriers. For Bi 2 Te 3 layers, the synthesis temperature plays particularly an important role for their physical properties as Te tends to re-evaporate due to its large vapor pressure when the temperature rises. We demonstrate by analyzing the Hall and Seebeck coeffi cients that the densities of defect-induced donors and acceptors exhibit unexpected dependencies on the growth temperature as if they compete with each other for the existence. It is then revealed that the GLM effect occurs in the layers when the Fermi level approaches the location of the Dirac point. We nevertheless attribute the GLM effect to the bulk states.In Figure 1 a, we show the dependence of the Seebeck coefficient S on the temperature T g of the layer growth in the hot wall epitaxy. The measurements were carried out at RT. The samples were prepared in four separate growth runs (#1, #2, #5, and #6), as distinguished by the symbol type in Figure 1 a,b. (The two sets #1 and #2 were previously investigated with respect to the structural properties in ref.[18]) The thickness d of the Bi 2 Te 3 layers was in the range of 0.15-1.3 µm (see Figure 1 b). One fi nds that S changed with T g in a complicated manner. In the growth of Bi 2 Te 3 layers, our previous study has established that the rapid re-evaporation of Te resulted in a deviation of the composition in the layers from stoichiometry for high growth temperatures. [ 18 ] For T g > 350 °C, the Bi content increased signifi cantly with increasing T g . We show the anticipated Bi content x in the layers by the dotted curve in Figure 1 b. The change in the densities of the defect-induced donors and acceptors is primarily responsible for the variation of S with T g

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Self-intercalation in Bi2Te3〈Cu〉

Cited by 8 publications

References 2 publications

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Electrochemical, optical, and magnetic properties of Ni x InSe (0 < x ≤ 1) intercalation compounds

Seebeck Effect and Giant Linear Magnetoresistance Affected by Conflicting n‐ and p‐Type Defect‐Induced Doping in Epitaxial Bi₂Te₃ Layers

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Self-intercalation in Bi2Te3〈Cu〉

Cited by 8 publications

References 2 publications

In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Electrochemical, optical, and magnetic properties of Ni x InSe (0 < x ≤ 1) intercalation compounds

Seebeck Effect and Giant Linear Magnetoresistance Affected by Conflicting n‐ and p‐Type Defect‐Induced Doping in Epitaxial Bi2Te3 Layers

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In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Seebeck Effect and Giant Linear Magnetoresistance Affected by Conflicting n‐ and p‐Type Defect‐Induced Doping in Epitaxial Bi₂Te₃ Layers