Self-limiting Nitrogen/Hydrogen Plasma Radical Chemistry in Plasma-Enhanced Atomic Layer Deposition of Cobalt

Abstract

formation and desorption due to overall endothermic reactions. Instead, H radicals react with trench N species, contributed to H transfer at metal precursor pulse, to form NH. These trench N species cannot be eliminated completely on Co(100) surface, which will be the source of N impurities for the deposited Co thin films. At the post-plasma stage, the metal surface will be covered with NHx-terminations with plasma generated NH radicals, which is then ready for the next deposition cycle. Our results explain why ammonia or H2/N2 plasma, which produce NHx species are required to deposit Co thin films using Co metallocene precursors.